IS4N46 IS4N45 LOW INPUT CURRENT DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS Dimensions in mm z UL recognised, File No. E91231JJ 2.54 X SPECIFICATION APPROVALS 1 6 z VDE 0884 in 3 available lead form : - 7.0 - STD 25 6.0 - G form 34 - SMD approved to CECC 00802 1.2 DESCRIPTION The IS4N45, IS4N46 are optically coupled 7.62 7.62 isolators consisting of an infrared light emitting 6.62 4.0 3.0 diode and a NPN silicon photo darlington which has an integral base-emitter resistor to optimise 13 0.5 switching speed and elevated temperature Max 3.0 characteristics in a standard 6pin dual in line 0.26 3.35 plastic package. These devices are designed to 0.5 equal the 4N45, 4N46 characteristics while providing greater voltage and current capability. FEATURES ABSOLUTE MAXIMUM RATINGS z Options :- (25C unless otherwise specified) 10mm lead spread - add G after part no. Surface mount - add SM after part no. Storage Temperature -40C to + 125C Tape&reel - add SMT&R after part no. Operating Temperature -25C to + 100C z High Isolation Voltage (5.3kV ,7.5kV ) Lead Soldering Temperature RMS PK z High Current Transfer Ratio ( 1500% typ.) (1/16 inch (1.6mm) from case for 10 secs) 260C z High BV ( 55V min.) CEO z Internal base-emitter resistor minimizes output leakage INPUT DIODE z Low input current 0.5mA I F APPLICATIONS Forward Current 50mA z Telephone ring detector Reverse Voltage 6V z Digital logic ground isolation Power Dissipation 70mW z Low input current line receiver z Logic to reed relay interface z Level shifting OUTPUT TRANSISTOR z Interface between logic families z Line voltage status indicator - low input Collector-emitter Voltage V 55V CEO power dissipation Emitter-baseVoltage V 6V EBO OPTION G OPTION SM Collector Current 150mA SURFACE MOUNT 7.62 Power Dissipation 300mW POWER DISSIPATION 0.6 1.25 0.26 0.1 0.75 Total Power Dissipation 350mW 10.46 10.16 9.86 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 19/11/08 DB91024ELECTRICAL CHARACTERISTICS ( T = 25C Unless otherwise noted ) A PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V ) 1.2 1.5 V I = 10mA F F Reverse Current (I)10 AV = 4V R R Output Collector-emitter Breakdown (BVceo) 55 V I = 1mA C Emitter-collector Breakdown (BVeco) 0.1 V I = 10A E Emitter-base Breakdown (BVebo) 6 V I = 10A E Coupled DC Current Transfer Ratio ( CTR ) IS4N46 350 % 0.5mA I , 1V V F CE IS4N46 500 % 1mA I , 1V V F CE IS4N45 250 % 1mA I , 1V V F CE IS4N46, IS4N45 200 % 10mA I , 1.2V V F CE Logic Low Output Voltage ( V ) OL IS4N46 1.0 V 0.5mA I , 1.75mA I F OL IS4N46 1.0 V 1mA I , 5mA I F OL IS4N45 1.0 V 1mA I , 2.5mA I F OL IS4N46, IS4N45 1.2 V 10mA I , 20mA I F OL Input to Output Isolation Voltage V 5300 V See note 1 ISO RMS 7500 V See note 1 PK 10 Input-output Isolation Resistance R 5x10 V = 500V (note 1) ISO IO Input-output Capacitance Cf 0.6 pF V = 0, f =1MHz Output rise time, tr 100 300 SV = 2V, I = 20mA CE C Output fall time, tf 20 100 SR = 100 L DB91024 19/11/08