IS25LQ010B-JBLE-TR ISSI

IS25LQ040B IS25LQ020B IS25LQ010B IS25LQ512B IS25LQ025B 4M/2M/1M/512K/256KBIT 3V QUAD SERIAL FLASH MEMORY WITH MULTI-I/O SPI DATA SHEET IS25LQ040B/020B/010B/512B/025B 4M/2M/1M/512K/256Kb 3V QUAD SERIAL FLASH MEMORY WITH MULTI-I/O SPI FEATURES Industry Standard Serial Interface Low Power with Wide Temp. Ranges - IS25LQ040B: 4Mbit/512Kbyte - Single 2.3V to 3.6V Voltage Supply - 10 mA Active Read Current - IS25LQ020B: 2Mbit/256Kbyte - 8 A Standby Current - IS25LQ010B: 1Mbit/128Kbyte - Deep Power Down - IS25LQ512B: 512Kbit/64Kbyte - Temp Grades: - IS25LQ025B: 256Kbit/32Kbyte Extended: -40C to +105C - 256-bytes per Programmable Page Standard Auto Grade (A3): -40C to +125C - Standard SPI/Dual/Quad Multi-I/O SPI - Supports Serial Flash Discoverable Parameters Advanced Security Protection (SFDP) - Software and Hardware Write Protection High Performance Serial Flash (SPI) - 4x256-Byte dedicated security area with user-lockable bits, (OTP) One Time - 104 MHz SPI/Dual/Quad Multi-I/O SPI Programmable Memory - 416 MHz equivalent Quad SPI - 128 bit Unique ID for each device (Call - 52MB/S Continuous Data Throughput Factory) - Supports SPI Modes 0 and 3 - More than 100,000 erase/program cycles 1 Industry Standard Pin-out & Pb-Free Packages - More than 20-year data retention - JB = 8-pin SOIC 208mil Efficient Read and Program modes - JN = 8-pin SOIC 150mil - JD = 8-pin TSSOP - Low Instruction Overhead Operations - JV = 8-pin VVSOP 150mil - Continuous data read with Byte Wrap around - JK = 8-contact WSON 6x5mm - Allows XIP operations (execute in place) - JU = 8-contact USON 2x3mm - Outperforms X16 Parallel Flash - KGD (Call Factory) Flexible & Cost Efficient Memory Architecture - Uniform 4 Kbyte Sectors or 32/64 Kbyte Blocks - Flexible 4, 32, 64 Kbyte, or Chip Erase - Standard Page Program 1 to 256 bytes - Program/Erase Suspend and Resume Integrated Silicon Solution, Inc.- www.issi.com 2 Rev.D11 09/22/2021