IS25LQ016B-JLLE ISSI

IS25LQ032B IS25LQ016B IS25LQ080B 32/16/8Mb 3V QUAD SERIAL FLASH MEMORY WITH MULTI-I/O SPI DATA SHEET IS25LQ032B/016B/080B 32/16/8Mb 3V QUAD SERIAL FLASH MEMORY MULTI-I/O SPI FEATURES Industry Standard Serial Interface Low Power with Wide Temp. Ranges - IS25LQ032B: 32Mbit/4Mbyte - Single 2.3V to 3.6V Voltage Supply - 10 mA Active Read Current - IS25LQ016B: 16Mbit/2Mbyte - 8 A Standby Current - IS25LQ080B: 8Mbit/1Mbyte - 5 A Deep Power Down - 256-bytes per Programmable Page Standard - Temp Grades: - Standard SPI/Dual/Quad Multi-I/O SPI Extended: -40C to +105C - Supports Serial Flash Discoverable Parameters Extended+: -40C to +125C (SFDP) Auto Grade: up to +125C High Performance Serial Flash (SPI) Note: Extended+ should not be used for Automotive. - 104 MHz SPI/Dual/Quad Multi-I/O SPI - 416 MHz equivalent Quad SPI Advanced Security Protection - 52MB/S Continuous Data Throughput - Software and Hardware Write Protection - Supports SPI Modes 0 and 3 - 4x256-Byte dedicated security area with - More than 100,000 erase/program cycles OTP user-lockable bits. - More than 20-year data retention - 128 bit Unique ID for each device (Call Factory) 1 Efficient Read and Program modes Industry Standard Pin-out & Pb-Free Packages - Low Instruction Overhead Operations - M = 16-pin SOIC 300mil - Continuous data read with Byte Wrap around - B = 8-pin SOIC 208mil - Allows XIP operations (execute in place) - N = 8-pin SOIC 150mil - Outperforms X16 Parallel Flash - F = 8-pin VSOP 208mil - K = 8-contact WSON 6x5mm Flexible & Cost Efficient Memory Architecture - L = 8-contact WSON 8x6mm - Uniform 4 Kbyte Sectors or 32/64 Kbyte Blocks - T = 8-contact USON 4x3mm - Flexible 4, 32, 64 Kbytes, or Chip Erase - G = 24-ball TFBGA 6x8mm 4x6 (Call Factory) - Standard Page Program 1 to 256 bytes - H = 24-ball TFBGA 6x8mm 5x5 (Call Factory) - Program/Erase Suspend and Resume - KGD (Call Factory) Note1: IS25LQ080B (not available in M, L, G, H) Integrated Silicon Solution, Inc.- www.issi.com 2 Rev. H2 06/27/2016