IS25LP256E IS25WP256E 256Mb SERIAL FLASH MEMORY 166MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE DATA SHEET IS25LP256E IS25WP256E 256Mb S ERIAL FLASH MEMORY 166MHZ MULTI I/O SPI & Q UAD I/O QPI DTR INTERFACE FEATURES Industry Standard Serial Interface Low Power with Wide Temp. Ranges - Single Voltage Supply - IS25LP256E: 256Mbit/32Mbyte IS25LP: 2.30V to 3.60V - IS25WP256E: 256Mbit/32Mbyte IS25WP: 1.70V to 1.95V - 3 or 4 Byte Addressing Mode - 7 mA Active Read Current - Supports Standard SPI, Fast, Dual, Dual - 10 A Standby Current I/O, Quad, Quad I/O, SPI DTR, Dual I/O - 1 A Deep Power Down DTR, Quad I/O DTR, and QPI - Temp Grades: - Software & Hardware Reset Extended: -40C to +105C - Supports Serial Flash Discoverable Auto Grade (A3): -40C to +125C Parameters (SFDP) Advanced Security Protection High Performance Serial Flash (SPI) - Software and Hardware Write Protection (3) - Advanced Sector/Block Protection - 80MHz Normal Read - Top/Bottom Block Protection - Up to166Mhz Fast Read - Power Supply Lock Protection - Up to 80MHz DTR (Dual Transfer Rate) - 4x256 Byte Dedicated Security Area - Equivalent Throughput of 664 Mb/s with OTP User-lockable Bits - Selectable Dummy Cycles - 128 bit Unique ID for Each Device - Configurable Drive Strength (Call Factory) - Supports SPI Modes 0 and 3 - More than 100,000 Erase/Program Cycles (1) Industry Standard Pin-out & Packages - More than 20-year Data Retention - M =16-pin SOIC 300mil Flexible & Efficient Memory Architecture - L = 8-contact WSON 8x6mm (4) - J = 8-contact WSON 8x6mm - Chip Erase with Uniform Sector/Block (2) - G = 24-ball TFBGA 6x8mm (4x6 ball array) Erase (4/32/64KB or 4/32/256 KB) (2) - H = 24-ball TFBGA 6x8mm (5x5 ball array) - Program 1 to 256 or 512 Byte per Page - KGD (Call Factory) - Program/Erase Suspend & Resume Notes: Efficient Read and Program modes 1. Call Factory for other package options available. 2. For optional 512 Byte Page size with 256 KB - Low Instruction Overhead Operations Block size, see the Ordering Information. - Continuous Read 8/16/32/64 Byte 3. 80MHz for 3.0V device and 50MHz for 1.8V device. Burst Wrap 4. Exposed Pad Size = 3.4mmx4.3mm instead of 4.7mmx4.7mm - Selectable Burst Length - QPI for Reduced Instruction Overhead - AutoBoot Operation - Data Learning Pattern for training in DTR operation Integrated Silicon Solution, Inc.- www.issi.com 2 Rev.A6 11/18/2020