IS29GL064 IS29GL032 IS29GL016 64Mb/32Mb/16Mb 3.0V PAGE MODE PARALLEL FLASH MEMORY DATA SHEET IS29GL064/032/016 IS29GL064/032/016 64/32/16 Megabit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES Supply operation Software Protection - V = 2.7~3.6V CC - Advanced Sector Protection (ASP) - V = 1.65~3.6V (I/O buffers) CCQ - V = 9.5~10.5V (WP /ACC) Support CFI (Common Flash Interface) HH Asynchronous random or page read Extended Memory Sector - Page size: 8 words or 16 bytes - 128-word (256-byte) sector for permanent - Page access: 25ns secure identification - Random access (V = 2.7~3.6V):70ns - Program or lock implemented at the factory or CCQ by customer Buffer program: 256-word MAX program buffer Low Power consumption: Standby mode Program time - 0.56us per byte (1.8MB/s TYP when using Data retention: 20 years (TYP) 256-word buffer size in buffer program without 100K minimum ERASE cycles per sector V ) HH - 0.31us per byte (3.2MB/s TYP when using Package Options 256-word buffer size in buffer program with V ) - 48-pin TSOP HH - 56-pin TSOP Memory Organization - 64-ball 9mm x 9mm BGA (Call Factory) - 16Mb: 32x 64KB (Uniform), or - 64-ball 11mm x 13mm BGA 8x 8KB (Top or Bottom Boot)+31x64KB - 48-ball 6mm x 8mm BGA - 32Mb: 64x 64KB (Uniform), or 8x 8KB (Top or Bottom Boot)+63x64KB Temperature Range - 64Mb: 128x 64KB (Uniform), or - Extended Grade: -40C to +105C 8x 8KB (Top or Bottom Boot)+127x64KB - Automotive A3 Grade: -40C to +125C Program/erase suspend and resume capability - Program suspend: Read from another sector - Erase suspend: Read or Program from another sector BLANK CHECK operation to verify an erased sector Unlock bypass, sector erase, chip erase, and buffer program capability - Fast buffered/batch programming - Fast sector and chip erase WP /ACC pin protection - VHH voltage on WP /ACC to accelerate programing performance - Protects highest/lowest sector (H/L uniform) or top/bottom two sectors (T/B boot) Integrated Silicon Solution, Inc. - www.issi.com 2 Rev. A2 04/30/2020