IS29LV032T/B IS29LV032T/B 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES Single power supply operation High performance program/erase speed - Full voltage range: 2.7 to 3.6 volts read and - Word program time: 15s typical write operations - Sector erase time: 100ms typical - Chip erase time: 8s typical High performance - Access time 70 ns JEDEC Standard compatible - 90 ns devices (Call Factory) Standard DATA polling and toggle bits Low power consumption (typical values at feature 5 MHz) - 9 mA typical active read current Erase Suspend / Resume modes: - 20 mA typical program/erase current Read and program another Sector during - Less than 1 A current in standby or automatic Erase Suspend Mode sleep mode Support JEDEC Common Flash Interface Flexible Sector Architecture: (CFI). - Eight 8-Kbyte sectors, sixty-three 64k-byte Low Vcc write inhibit < 2.5V sectors - 8-Kbyte sectors for Top or Bottom boot Minimum 100K program/erase endurance - Sector Group protection: cycles Hardware locking of sectors to prevent RESET hardware reset pin program or erase operations within individual - Hardware method to reset the device to read sectors mode Additionally, temporary Sector Unprotect allows code changes in previously locked WP /ACC input pin sectors - Write Protect (WP ) function allows protection of outermost two boot sectors, Secured Silicon Sector regardless of sector protect status - Provides a 128-words area for code or data - Acceleration (ACC) function provides that can be permanently protected. accelerated program times - Once this sector is protected, it is prohibited to program or erase within the sector again. Package Options - 48-pin TSOP (Type 1) - 48 ball 6mm x 8mm TFBGA (Call Factory) Industrial Temperature Range (-40 to 85 C) (Call Factory) Automotive Grades Range GENERAL DESCRIPTION The IS29LV032T/B is a 32-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 4,194,304 bytes or 2.097,152 words available in top or bottom boot configurations. Any word can be programmed typically in 15s. The IS29LV032T/B features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high- performance microprocessor systems. The IS29LV032T/B has separate Output Enable (OE ), Chip Enable (CE ), and Write Enable (WE ) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full Chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector Integrated Silicon Solution, Inc.- www.issi.com 1 Rev. D 07/16/2014 IS29LV032T/B CONNECTION DIAGRAMS 48-Ball TFBGA Top View, Balls Facing Down Integrated Silicon Solution, Inc.- www.issi.com 2 Rev. D 07/16/2014