CLA60MT1200NTZ V = 1200 V RRM High Efficiency Thyristor I = 30 A TAV V = 1.25 V T Three Quadrants operation: QI - QIII 1~ Triac Part number CLA60MT1200NTZ Marking on Product: CLA60MT1200NTZ Backside: anode/cathode Three Quadrants Operation Positive Half Cycle + T2 T2 2 (-) I (+) I GT GT T1 T1 REF REF QII QI I - + I GT GT T2 QIII QIV 3 (-) I GT 1 T1 REF - Negative Half Cycle Note: All Polarities are referenced to T1 Features / Advantages: Applications: Package: TO-268AA (D3Pak-HV) Triac for line frequency Line rectifying 50/60 Hz Industry standard outline Three Quadrants Operation Softstart AC motor control RoHS compliant - QI - QIII DC Motor control Epoxy meets UL 94V-0 Planar passivated chip Power converter High creepage distance Long-term stability AC power control between terminals of blocking currents and voltages Lighting and temperature control Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200120f 2020 IXYS all rights reservedCLA60MT1200NTZ Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1300 V V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ T = 25C 1200 V V max. repetitive reverse/forward blocking voltage RRM/DRM VJ I reverse current, drain current V = 1 2 0 0 V T = 25C 10 A R/D R/D VJ V = 1 2 0 0 V T = 1 2 5 C 2 mA R/D VJ forward voltage drop V I = 3 0 A T = 25C 1.28 V T T VJ I = 6 0 A 1.56 V T T = C 1.25 V I = 3 0 A 125 T VJ I = 6 0 A 1.61 V T average forward current T = 1 2 0 C T = 1 5 0 C 30 A I TAV C VJ RMS forward current per phase I 180 sine 66 A RMS V T = 1 5 0 C 0.86 V threshold voltage T0 VJ for power loss calculation only slope resistance r 12.5 m T 0.55 K/W R thermal resistance junction to case thJC thermal resistance case to heatsink R 0.2 K/W thCH P total power dissipation T = 25C 230 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 380 A I TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 410 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 325 VJ t = 8,3 ms (60 Hz), sine V = 0 V 350 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 720 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 700 As R t = 10 ms (50 Hz), sine T = 1 5 0 C 530 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 510 As R junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 25 pF C J R VJ P max. gate power dissipation t = 30 s T = 1 5 0 C 10 W GM P C t = 300 s 5 W P 0.5 W P average gate power dissipation GAV critical rate of rise of current T = 150C f = 50 Hz repetitive, I = 90 A 150 (di/dt) A/s cr VJ T 0.3 t = 2 0 0 s di /dt = A/s P G I = 0.3A V = V non-repet., I = 30 A 500 A/s G DRM T critical rate of rise of voltage V = V T = 150C 500 V/s (dv/dt) VJ cr DRM R = method 1 (linear voltage rise) GK gate trigger voltage V V = 6 V T = 25C 1.7 V GT D VJ T = -40C 1.9 V VJ gate trigger current V = 6 V T = 25C 60 mA I VJ GT D T = -40C 80 mA VJ gate non-trigger voltage V V = V T = 150C 0.2 V GD D DRM VJ gate non-trigger current I 1 mA GD latching current t = 10 s T = 25C 90 mA I VJ L p I = 0.3A di /dt = 0.3 A/s G G holding current I V = 6 V R = T = 25C 60 mA H D GK VJ gate controlled delay time t V = V T = 25C 2 s VJ gd D DRM I = 0.3A di /dt = 0.3 A/s G G turn-off time V = 100 V I = 30A V = V T =125 C 150 s t q R T DRM VJ di/dt = 10 A/s dv/dt = 20 V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200120f 2020 IXYS all rights reserved