CLB30I1200HB V = 1200 V RRM High Efficiency Thyristor I = 30 A TAV V = 1.25 V T Single Anode Gated Thyristor Part number CLB30I1200HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 Thyristor for line frequency Line rectifying 50/60 Hz Industry standard outline Planar passivated chip Softstart AC motor control RoHS compliant Long-term stability DC Motor control Epoxy meets UL 94V-0 Power converter AC power control Lighting and temperature control Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c 2019 IXYS all rights reservedCLB30I1200HB Ratings Thyristor Symbol Definition Conditions min. typ. max. Unit T = 25C 1300 V V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ T = 25C 1200 V V max. repetitive reverse/forward blocking voltage RRM/DRM VJ I reverse current, drain current V = 1 2 0 0 V T = 25C 10 A R/D R/D VJ V = 1 2 0 0 V T = 1 2 5 C 2 mA R/D VJ forward voltage drop V I = 3 0 A T = 25C 1.28 V T T VJ I = 6 0 A 1.56 V T T = C 1.25 V I = 3 0 A 125 T VJ I = 6 0 A 1.61 V T average forward current T = 1 2 0 C T = 1 5 0 C 30 A I TAV C VJ RMS forward current I 180 sine 47 A T(RMS) V T = 1 5 0 C 0.86 V threshold voltage T0 VJ for power loss calculation only slope resistance r 12.5 m T 0.5 K/W R thermal resistance junction to case thJC thermal resistance case to heatsink R 0.3 K/W thCH P total power dissipation T = 25C 250 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 300 A I TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 325 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 255 VJ t = 8,3 ms (60 Hz), sine V = 0 V 275 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 450 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 440 As R t = 10 ms (50 Hz), sine T = 1 5 0 C 325 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 315 As R junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 13 pF C J R VJ P max. gate power dissipation t = 30 s T = 1 5 0 C 10 W GM P C t = 300 s 5 W P 0.5 W P average gate power dissipation GAV critical rate of rise of current T = 150C f = 50 Hz repetitive, I = 90 A 150 (di/dt) A/s cr VJ T 0.3 t = 2 0 0 s di /dt = A/s P G I = 0.3A V = V non-repet., I = 30 A 500 A/s G DRM T critical rate of rise of voltage V = V T = 150C 500 V/s (dv/dt) VJ cr DRM R = method 1 (linear voltage rise) GK gate trigger voltage V V = 6 V T = 25C 1.3 V GT D VJ T = -40C 1.6 V VJ gate trigger current V = 6 V T = 25C 28 mA I VJ GT D T = -40C 50 mA VJ gate non-trigger voltage V V = V T = 150C 0.2 V GD D DRM VJ gate non-trigger current I 1 mA GD latching current t = 10 s T = 25C 90 mA I VJ L p I = 0.3A di /dt = 0.3 A/s G G holding current I V = 6 V R = T = 25C 60 mA H D GK VJ gate controlled delay time t V = V T = 25C 2 s VJ gd D DRM I = 0.3A di /dt = 0.3 A/s G G turn-off time V = 100 V I = 30A V = V T =125 C 150 s t q R T DRM VJ di/dt = 10 A/s dv/dt = 20 V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c 2019 IXYS all rights reserved