CMA60MT1600NHR V = 1600 V RRM Thyristor I = 30 A TAV V = 1.35 V T Three Quadrants operation: QI - QIII 1~ Triac Part number CMA60MT1600NHR Backside: isolated Three Quadrants Operation Positive Half Cycle + T2 T2 2 (-) I (+) I GT GT T1 T1 REF REF QII QI I - + I GT GT T2 QIII QIV 3 (-) I GT 1 T1 REF - Negative Half Cycle Note: All Polarities are referenced to T1 Features / Advantages: Applications: Package: ISO247 Triac for line frequency Line rectifying 50/60 Hz Isolation Voltage: V~ 3600 Three Quadrants Operation Softstart AC motor control Industry standard outline - QI - QIII DC Motor control RoHS compliant Planar passivated chip Power converter Epoxy meets UL 94V-0 Long-term stability AC power control Soldering pins for PCB mounting of blocking currents and voltages Lighting and temperature control Backside: DCB ceramic Reduced weight Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200205d 2020 IXYS all rights reservedCMA60MT1600NHR Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1700 V V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ T = 25C 1600 V V max. repetitive reverse/forward blocking voltage RRM/DRM VJ I reverse current, drain current V = 1 6 0 0 V T = 25C 10 A R/D R/D VJ V = 1 6 0 0 V T = 1 2 5 C 2 mA R/D VJ forward voltage drop V I = 3 0 A T = 25C 1.36 V T T VJ I = 6 0 A 1.70 V T T = C 1.35 V I = 3 0 A 125 T VJ I = 6 0 A 1.79 V T average forward current T = 9 0 C T = 1 5 0 C 30 A I TAV C VJ RMS forward current per phase I 180 sine 66 A RMS V T = 1 5 0 C 0.89 V threshold voltage T0 VJ for power loss calculation only slope resistance r 15.1 m T 0.9 K/W R thermal resistance junction to case thJC thermal resistance case to heatsink R 0.3 K/W thCH P total power dissipation T = 25C 140 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 260 A I TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 280 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 220 VJ t = 8,3 ms (60 Hz), sine V = 0 V 240 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 340 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 325 As R t = 10 ms (50 Hz), sine T = 1 5 0 C 240 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 240 As R junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 9 pF C J R VJ P max. gate power dissipation t = 30 s T = 1 5 0 C 10 W GM P C t = 300 s 5 W P 0.5 W P average gate power dissipation GAV critical rate of rise of current T = 125C f = 50 Hz repetitive, I = 90 A 150 (di/dt) A/s cr VJ T 0.2 t = 2 0 0 s di /dt = A/s P G I = 0.2A V = V non-repet., I = 30 A 500 A/s G DRM T critical rate of rise of voltage V = V T = 125C 500 V/s (dv/dt) VJ cr DRM R = method 1 (linear voltage rise) GK gate trigger voltage V V = 6 V T = 25C 1.3 V GT D VJ T = -40C 1.6 V VJ gate trigger current V = 6 V T = 25C 60 mA I VJ GT D T = -40C 80 mA VJ gate non-trigger voltage V V = V T = 125C 0.2 V GD D DRM VJ gate non-trigger current I 1 mA GD latching current t = 10 s T = 25C 90 mA I VJ L p I = 0.2A di /dt = 0.2 A/s G G holding current I V = 6 V R = T = 25C 60 mA H D GK VJ gate controlled delay time t V = V T = 25C 2 s VJ gd D DRM I = 0.5A di /dt = 0.5 A/s G G turn-off time V = 100 V I = 30A V = V T =125 C 150 s t q R T DRM VJ di/dt = 10 A/s dv/dt = 20 V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200205d 2020 IXYS all rights reserved