CPC1301 Optocoupler with High-Voltage Darlington Output INTEGRATED CIRCUITS DIVISION Parameter Rating Units Description Breakdown Voltage - BV 350 V CEO P The CPC1301 is a unidirectional input optocoupler Current Transfer Ratio - CTR 1000-8000 % with a high-voltage Darlington output. Light output from the highly efficient infrared LED activates the optically coupled silicon NPN photo-Darlington output transistor. The input LED and the output transistor are Features separated by a 5000V isolation barrier. rms 5000V Input/Output Isolation rms With a LED current of only 1mA, a current transfer 350V Breakdown Voltage P ratio of 1000% to 8000% is guaranteed at the Small 4-Pin Package collector of the 350V Darlington output transistor. Surface Mount Tape & Reel Version Available The CPC1301 s low input current, high current transfer ratio, high output voltage capability, and Applications large isolation barrier rating make it ideal for many Telecom Switching applications such as telecom, industrial, and power Tip/Ring Circuits control. Hook Switch Modem Switching (Laptop, Notebook, Pocket Size) Loop Detect Approvals Ringing Detect UL 1577 Approved Component: File E76270 Current Sensing CSA Certified Component: Certificate 1172007 EN 60950 Certified Component: TUV Certificate B 13 12 82667 003 Ordering Information Part Number Description CPC1301G 4-Pin DIP (100/Tube) CPC1301GR 4-Pin Surface Mount (100/Tube) CPC1301GRTR 4-Pin Surface Mount (1000/Reel) Pin Configuration 1 4 A C 2 3 K E DS-CPC1301-R06 1 www.ixysic.comCPC1301 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to Breakdown Voltage, BV 350 V CEO P the device. Functional operation of the device at conditions Reverse Input Voltage 5 V beyond those indicated in the operational sections of this Input Control Current 50 mA data sheet is not implied. Peak (10ms) 1 A 1 Typical values are characteristic of the device at +25C, Input Power Dissipation 150 mW and are the result of engineering evaluations. They are 2 Phototransistor Power Dissipation 150 mW provided for information purposes only, and are not part of Isolation Voltage, Input to Output 5000 V the manfacturing testing requirements. rms Operational Temperature -40 to +85 C Storage Temperature -40 to +125 C 1 o Derate linearly 1.33 mW / C 2 o Derate linearly 1.5 mW / C Electrical Characteristics 25C Parameters Conditions Symbol Min Typ Max Units Output Characteristics Phototransistor Breakdown Voltage I =100A BV 350 - - V CEO CEO P Emitter-Collector Breakdown Voltage I =0.1mA BV 0.3 - - V E ECO Phototransistor Output (Dark) Current V =200V, I =0mA I - - 100 nA CEO F CEO Saturation Voltage I =10mA, I =1mA -- 1 C F V V CE(Sat) I =100mA, I =10mA - - 1.2 C F Current Transfer Ratio I =1mA, V =1V CTR 1000 5500 8000 % F CE Output Capacitance V =50V, f=1MHz C -13 - pF CEO OUT Input Characteristics Input Control Current I =10mA, V =1V I - 0.07 1 mA C CE F Input Voltage Drop I =5mA V 0.9 1.2 1.4 V F F Input Reverse Current V=5V I - - 10 A R R Common Characteristics Input to Output Capacitance - C -3 - pF I/O Switching Characteristics 25C Characteristic Symbol Test Condition Typ Units Rise Time t 40 R I F Fall Time t 2.6 V =10V F CC t t V F R CE Turn-On Time t I =10mA 2.75 on F 90% Storage Time t R =100 20 10% S L s t S Turn-Off Time t 60 t off on t off Turn-On Time t 1 V =10V on CC Storage Time t I =16mA 40 S F Switching Time Test Circuit V Turn-Off Time t R =180 80 CC off L R L V I F CE Pulse Width=5ms Duty Cycle=50% 2 R06 www.ixysic.com