CS 35 Phase Control Thyristors V = 800-1400 V RRM I = 120 A T(RMS) I = 69 A T(AV)M TO-208AC 2 V V Type RSM RRM (TO-65) 1 2 3 V V DSM DRM VV 3 900 800 CS 35-08io4 1300 1200 CS 35-12io4 1500 1400 CS 35-14io4 1-28 UNF-2 A 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions Maximum Ratings Features Thyristor for line frequencies I T = T 120 A T(RMS) VJ VJM International standard package I T = 85 C 180 sine 63 A T(AV)M case JEDEC TO-208AC T = 80 C 180 sine 69 A case Planar glassivated chip Long-term stability of blocking I T = 45 C t = 10 ms (50 Hz), sine 1200 A TSM VJ currents and voltages V = 0 t = 8.3 ms (60 Hz), sine 1340 A R T = T t = 10 ms (50 Hz), sine 1100 A VJ VJM Applications V = 0 t = 8.3 ms (60 Hz), sine 1250 A R Motor control 2 2 Power converter I t T = 45 C t = 10 ms (50 Hz), sine 7200 A s VJ AC power controller 2 V = 0 t = 8.3 ms (60 Hz), sine 7550 A s R 2 T = T t = 10 ms (50 Hz), sine 6050 A s VJ VJM Advantages 2 V = 0 t = 8.3 ms (60 Hz), sine 6500 A s R Space and weight savings Simple mounting (di/dt) T = T repetitive, I = 150 A 150 A/ s cr VJ VJM T Improved temperature and power f = 50 Hz, t =200 s P cycling V = 2/3 V D DRM I = 0.5 A non repetitive, I = I 400 A/ s G T T(AV)M di /dt = 0.5 A/ s G (dv/dt) T = T V = 2/3 V 1000 V/ s cr VJ VJM DR DRM Dimensions in mm (1 mm = 0.0394 ) R = method 1 (linear voltage rise) GK P T = T t = 30 s10W GM VJ VJM P I = I t = 500 s5W T T(AV)M P P 0.5 W G(AV) V 10 V RGM T -40...+125 C VJ T 125 C VJM T -40...+125 C stg M Mounting torque 2.5 Nm d 22 lb.in. Weight 20 g Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 1 - 3 2000 IXYS All rights reservedCS 35 Symbol Test Conditions Characteristic Values I , I T = T V = V V = V 10 mA R D VJ VJM R RRM D DRM V I = 150 A T = 25 C 1.5 V T T VJ V For power-loss calculations only (T = 125 C) 0.85 V T0 VJ r 3.5 m T V V = 6 V T = 25 C 1.5 V GT D VJ T = -40 C 1.9 V VJ I V = 6 V T = 25 C 100 mA GT D VJ T = -40 C 200 mA VJ V T = T V = 2/3 V 0.2 V GD VJ VJM D DRM I 1mA GD I T = 25 C t = 30 s 100 mA L VJ P I = 0.1 A di /dt = 0.1 A/ s G G I T = 25 C V = 6 V R = 80 mA H VJ D GK t T = 25 C V = 1/2 V 2 s gd VJ D DRM I = 0.1 A di /dt = 0.1 A/ s G G t T = T I = 50 A, t = 200 s di/dt = -10 A/ s typ. 100 s q VJ VJM T P V = 100 V dv/dt = 10 V/ s V = 2/3 V R D DRM R DC current 0.4 K/W thJC R DC current 0.6 K/W thJH d Creepage distance on surface 1.7 mm S d Strike distance through air 1.7 mm A 2 a Max. acceleration, 50 Hz 50 m/s 10 500 8 V 1: P = 0.5 W G(AV) typ. lim. A 2: P = 5 W t = 500 s 6 GM G 3: P = 10 W t = 30 s T = 25C GM G VJ 4 400 T = 125C VJ I V 3 T G 2 2 1 300 1 C 0.8 200 0.6 B I : T = -40C GD VJ I : T = 0C GD VJ 0.4 I : T = 25C A GD VJ 100 0.2 I : T = 25C GD VJ I : T =125C GD VJ 2 4 6 8 0.1 0 0 1 2 3 4 10 10 10 10 mA 10 0 1234V I V G T Fig. 1 Gate trigger range Fig. 2 On-state characteristics Triggering: A = no B = possible, C = safe 2 - 3 2000 IXYS All rights reserved