DCG130X1200NA prelimininary V = 1200 V RRM SiC Schottky Diode I = 2x 60 A FAV Ultra fast switching Zero reverse recovery Part number DCG130X1200NA Backside: isolated UL pending 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Ultra fast switching Solar inverter Isolation Voltage: 3000 V~ Zero reverse recovery Uninterruptible power supply (UPS) Industry standard outline Zero forward recovery Welding equipment RoHS compliant Temperature independent switching Switched-mode power supplies Epoxy meets UL 94V-0 behavior Medical equipment Base plate with Aluminium nitride Positive temperature coefficient of forward High speed rectifier isolation for low thermal resistance voltage Advanced power cycling T = 175C VJM Terms & Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specicfi application of your product, please contact the sales ofcfi e, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments - the conclusion of quality agreements - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. 20180115a 2018 IXYS All rights reserved 1 - 6DCG130X1200NA prelimininary SiC Diode (per leg) Ratings Symbol Definitions Conditions min. typ. max. V max. non-repetitive reverse blocking voltage T = 25C 1200 V RSM VJ V max. repetitive reverse blocking voltage T = 25C 1200 V RRM VJ reverse current I V = V T = 25C 140 800 A R R RRM VJ T = 175C 480 1200 A VJ forward voltage V I = 30 A T = 25C 1.3 V F F VJ I = 60 A 1.6 1.8 V F I = 30 A T = 175C 1.55 V F VJ I = 60 A 2.3 3 V F I average forward current T = 80C rectangular, d = 0.5 60 A FAV C T = 100C T = 175C 53 A C VJ forward current I based on typ. V and r T = 25C 105 A F25 F0 F C I T = 80C 81 A F80 C I T = 100C 71 A F100 C max forward surge current I t = 10 ms,half sine (50 Hz) T = 25C A FSM VJ t = 10 s, pulse V = 0V 1150 A P R threshold voltage V T = 125C 0.80 V F0 VJ 175C 0.73 V for power loss calculation slope resistance r T = 125C 20.0 mW F VJ 175C 24.6 mW total capacitive charge Q V = 800 V, I = 60A T = 25C 300 nC C R F VJ dI/dt = 800 A/s C total capacitance V = 0 V 4500 pF R V = 400 V T = 25C, f = 1 MHz 280 pF R VJ V = 800 V 200 pF R thermal resistance junction to case R 0.43 K/W thJC thermal resistance junction to heatsink R with heatsink compound IXYS test setup 0.55 K/W thJH IXYS reserves the right to change limits, test conditions and dimensions. 20180115a 2018 IXYS All rights reserved 2 - 6