DFE10I600PM IXYS

DFE10I600PM V = 600 V RRM FRED I = 10 A FAV t = 35 ns rr Fast Recovery Epitaxial Diode Single Diode Part number DFE10I600PM Backside: isolated 3 1 Features / Advantages: Applications: Package: TO-220FP Planar passivated chips Antiparallel diode for high frequency Isolation Voltage: V~ 2500 Low leakage current switching devices Industry standard outline Very short recovery time Antisaturation diode RoHS compliant Improved thermal behaviour Snubber diode Epoxy meets UL 94V-0 Very low Irm-values Free wheeling diode Soldering pins for PCB mounting Very soft recovery behaviour Rectifiers in switch mode power Base plate: Plastic overmolded tab Avalanche voltage rated for reliable operation supplies (SMPS) Reduced weight Soft reverse recovery for low EMI/RFI Uninterruptible power supplies (UPS) Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20201027c 2020 IXYS all rights reservedDFE10I600PM Ratings Fast Diode Symbol Definition Conditions min. typ. max. Unit T = 25C 600 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 600 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 6 0 0 V T = 25C 20 A R R VJ V = 4 8 0 V T = 1 2 5 C 1.5 mA R VJ forward voltage drop V I = 1 0 A T = 25C 1.53 V F F VJ I = 2 0 A 1.75 V F T = C 1.41 V I = 1 0 A 150 F VJ I = 2 0 A 1.73 V F average forward current T = 8 0 C T = 1 5 0 C 10 A I FAV C VJ rectangular d = 0.5 V T = 1 5 0 C 1.12 V threshold voltage F0 VJ for power loss calculation only slope resistance r 29 m F thermal resistance junction to case 4.2 K/W R thJC thermal resistance case to heatsink K/W R 0.5 thCH P total power dissipation T = 25C 30 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 100 A I R FSM VJ junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 5 pF C J R VJ I max. reverse recovery current T = 25 C 2.6 A RM VJ I = 10 A V = 300 V T = 125C 4 A F R VJ reverse recovery time -di /dt = 100 A/s T = 25 C 65 ns t F rr VJ T = 125C 110 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20201027c 2020 IXYS all rights reserved