DH60-18A IXYS

DH60-18A V = 1800 V RRM Sonic Fast Recovery Diode I = 60 A FAV t = 230 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DH60-18A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 Planar passivated chips Antiparallel diode for high frequency Industry standard outline Very low leakage current switching devices RoHS compliant Very short recovery time Antisaturation diode Epoxy meets UL 94V-0 Improved thermal behaviour Snubber diode Very low Irm-values Free wheeling diode Very soft recovery behaviour Rectifiers in switch mode power Avalanche voltage rated for reliable supplies (SMPS) operation Uninterruptible power supplies (UPS) Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200213d 2020 IXYS all rights reservedDH60-18A Ratings Fast Diode Symbol Definition Conditions min. typ. max. Unit T = 25C 1800 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1800 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 1 8 0 0 V T = 25C 200 A R R VJ V = 1 8 0 0 V T = 1 2 5 C 2 mA R VJ forward voltage drop V I = 6 0 A T = 25C 2.04 V F F VJ I = 1 2 0 A 2.57 V F T = C 2.03 V I = 6 0 A 125 F VJ I = 1 2 0 A 2.73 V F average forward current T = 1 0 0 C T = 1 5 0 C 60 A I FAV C VJ rectangular d = 0.5 V T = 1 5 0 C 1.28 V threshold voltage F0 VJ for power loss calculation only slope resistance r 12 m F thermal resistance junction to case 0.3 K/W R thJC thermal resistance case to heatsink K/W R 0.3 thCH P total power dissipation T = 25C 415 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 700 A I R FSM VJ junction capacitance V = 1 2 0 0 V f = 1 MHz T = 25C 32 pF C J R VJ I max. reverse recovery current T = 25 C 60 A RM VJ I = 60 A V = 1200 V T = 100C 70 A F R VJ reverse recovery time -di /dt = 800A/s T = 25 C 230 ns t rr F VJ T = 100C 350 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200213d 2020 IXYS all rights reserved