DHG60U1200LB IXYS

DHG60U1200LB V = 1200 V RRM Sonic Fast Recovery Diode I = 60 A DAV t = 160 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery 3~ Rectifier Bridge Part number DHG60U1200LB Backside: isolated 1/2/3 7 8 9 4/5/6 Features / Advantages: Applications: Package: SMPD Planar passivated chips Antiparallel diode for high frequency Isolation Voltage: V~ 3000 Very low leakage current switching devices Industry convenient outline Very short recovery time Antisaturation diode RoHS compliant Improved thermal behaviour Snubber diode Epoxy meets UL 94V-0 Very low Irm-values Free wheeling diode Soldering pins for PCB mounting Very soft recovery behaviour Rectifiers in switch mode power Backside: DCB ceramic Avalanche voltage rated for reliable supplies (SMPS) Reduced weight operation Uninterruptible power supplies (UPS) Advanced power cycling Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190404d 2019 IXYS all rights reservedDHG60U1200LB Ratings Fast Diode Symbol Definition Conditions min. typ. max. Unit T = 25C 1200 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1200 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 1 2 0 0 V T = 25C 50 A R R VJ V = 1 2 0 0 V T = 1 2 5 C 0.5 mA R VJ forward voltage drop V I = 2 0 A T = 25C 2.00 V F F VJ I = 6 0 A 2.92 V F T = C 1.94 V I = 2 0 A 125 F VJ I = 6 0 A 3.15 V F bridge output current T = 8 0 C T = 1 5 0 C 60 A I DAV C VJ rectangular d = V T = 1 5 0 C 1.35 V threshold voltage F0 VJ for power loss calculation only slope resistance r 29 m F thermal resistance junction to case 1.2 K/W R thJC thermal resistance case to heatsink K/W R 0.40 thCH P total power dissipation T = 25C 100 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 200 A I R FSM VJ junction capacitance V = 6 0 0 V f = 1 MHz T = 25C 11 pF C J R VJ I max. reverse recovery current T = 25 C 19 A RM VJ I = 20 A V = 600 V T = 125C 25 A F R VJ reverse recovery time -di /dt = 600A/s T = 25 C 160 ns t rr F VJ T = 125C 280 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190404d 2019 IXYS all rights reserved