DLA40IM800PC V = 800 V RRM High Efficiency Standard Rectifier I = 40 A FAV V = 1.26 V F Single Diode Part number DLA40IM800PC Marking on Product: DLA40IM800PC Backside: cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) Planar passivated chips Diode for main rectification Industry standard outline Very low leakage current For single and three phase RoHS compliant Very low forward voltage drop bridge configurations Epoxy meets UL 94V-0 Improved thermal behaviour Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b 2019 IXYS all rights reservedDLA40IM800PC Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 900 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 800 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 8 0 0 V T = 25C 10 A R VJ R V = 8 0 0 V T = 1 5 0 C 0.05 mA R VJ forward voltage drop V I = 4 0 A T = 25C 1.30 V F F VJ I = 8 0 A 1.56 V F T = C 1.26 V I = 4 0 A 150 F VJ I = 8 0 A 1.65 V F average forward current T = 1 2 0 C T = 1 7 5 C 40 A I FAV C VJ rectangular V T = 1 7 5 C 0.85 V threshold voltage F0 VJ for power loss calculation only slope resistance r 10 m F thermal resistance junction to case 0.8 K/W R thJC thermal resistance case to heatsink K/W R 0.25 thCH P total power dissipation T = 25C 185 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 300 A I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 325 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 255 VJ t = 8,3 ms (60 Hz), sine V = 0 V 275 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 450 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 440 As R t = 10 ms (50 Hz), sine T = 1 5 0 C 325 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 315 As R V = 4 0 0 V f = 1 MHz T = 25C 10 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b 2019 IXYS all rights reserved