DMA150E1600NA V = 1600 V RRM Standard Rectifier I = 150 A FAV V = 1.05 V F Single Diode Part number DMA150E1600NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Diode for main rectification Isolation Voltage: V~ 3000 Very low leakage current For single and three phase Industry standard outline Very low forward voltage drop bridge configurations RoHS compliant Improved thermal behaviour Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b 2019 IXYS all rights reservedDMA150E1600NA Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1700 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1600 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 6 0 0 V T = 25C 200 A R VJ R V = 1 6 0 0 V T = 1 5 0 C 3.5 mA R VJ forward voltage drop V I = 1 5 0 A T = 25C 1.15 V F F VJ I = 3 0 0 A 1.36 V F T = C 1.05 V I = 1 5 0 A 125 F VJ I = 3 0 0 A 1.33 V F average forward current T = 1 1 0 C T = 1 5 0 C 150 A I FAV C VJ rectangular d = 0.5 V T = 1 5 0 C 0.78 V threshold voltage F0 VJ for power loss calculation only slope resistance r 1.8 m F thermal resistance junction to case 0.2 K/W R thJC thermal resistance case to heatsink K/W R 0.1 thCH P total power dissipation T = 25C 620 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 3.00 kA I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 3.24 kA R t = 10 ms (50 Hz), sine T = 1 5 0 C kA 2.55 VJ t = 8,3 ms (60 Hz), sine V = 0 V 2.76 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 45.0 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 43.7 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 32.5 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 31.6 kAs R V = 4 0 0 V f = 1 MHz T = 25C 60 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b 2019 IXYS all rights reserved