DNA30E2200PA IXYS

DNA30E2200PA V = 2200 V RRM High Voltage Standard Rectifier I = 30 A FAV V = 1.24 V F Single Diode Part number DNA30E2200PA Backside: anode 1 3 Features / Advantages: Applications: Package: TO-220 Planar passivated chips Diode for main rectification Industry standard outline Very low leakage current For single and three phase RoHS compliant Very low forward voltage drop bridge configurations Epoxy meets UL 94V-0 Improved thermal behaviour Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d 2019 IXYS all rights reservedDNA30E2200PA Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 2300 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 2200 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 2 2 0 0 V T = 25C 40 A R VJ R V = 2 2 0 0 V T = 1 5 0 C 1.5 mA R VJ forward voltage drop V I = 3 0 A T = 25C 1.26 V F F VJ I = 6 0 A 1.53 V F T = C 1.24 V I = 3 0 A 150 F VJ I = 6 0 A 1.63 V F average forward current T = 1 4 0 C T = 1 7 5 C 30 A I FAV C VJ rectangular d = 0.5 V T = 1 7 5 C 0.83 V threshold voltage F0 VJ for power loss calculation only slope resistance r 13.4 m F thermal resistance junction to case 0.7 K/W R thJC thermal resistance case to heatsink K/W R 0.5 thCH P total power dissipation T = 25C 210 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 370 A I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 400 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 315 VJ t = 8,3 ms (60 Hz), sine V = 0 V 340 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 685 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 665 As R t = 10 ms (50 Hz), sine T = 1 5 0 C 495 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 480 As R V = 7 0 0 V f = 1 MHz T = 25C 7 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d 2019 IXYS all rights reserved