DS 35 DSI 35
DSA 35 DSAI 35
V = 800-1800 V
Rectifier Diode
RRM
I = 80 A
F(RMS)
Avalanche Diode
I = 49 A
F(AV)M
DO-203 AB
V V V Anode Cathode
RSM (BR)min RRM
C A
V V V on stud on stud
DS DSI
DSA DSAI
900 - 800 DS 35-08A DSI 35-08A
A C
1300 - 1200 DS 35-12A DSI 35-12A
1300 1300 1200 DSA 35-12A DSAI 35-12A
1700 1750 1600 DSA 35-16A DSAI 35-16A
1900 1950 1800 DSA 35-18A DSAI 35-18A
1/4-28UNF
Only for Avalanche Diodes
A = Anode C = Cathode
Symbol Test Conditions Maximum Ratings
I T = T 80 A
F(RMS) VJ VJM
I T = 100C; 180 sine 49 A Features
F(AVM) case
International standard package,
P DSA(I) types, T = T , t = 10 s11kW
RSM VJ VJM p
JEDEC DO-203 AB (DO-5)
Planar glassivated chips
I T = 45C; t = 10 ms (50 Hz), sine 650 A
FSM VJ
V = 0 t = 8.3 ms (60 Hz), sine 690 A
R
Applications
T = T t = 10 ms (50 Hz), sine 600 A
VJ VJM
High power rectifiers
V = 0 t = 8.3 ms (60 Hz), sine 640 A
R
Field supply for DC motors
2 2
Power supplies
I t T = 45C t = 10 ms (50 Hz), sine 2100 A s
VJ
2
V = 0 t = 8.3 ms (60 Hz), sine 2000 A s
R
Advantages
2
T = T t = 10 ms (50 Hz), sine 1800 A s
VJ VJM
Space and weight savings
2
V = 0 t = 8.3 ms (60 Hz), sine 1700 A s
R
Simple mounting
T -40...+180 C Improved temperature and power
VJ
T 180 C cycling
VJM
T -40...+180 C Reduced protection circuits
stg
M Mounting torque 4.5-5.5 Nm
d
Dimensions in mm (1 mm = 0.0394")
40-49 lb.in.
Weight 15 g
Symbol Test Conditions Characteristic Values
I T = T ; V = V 4mA
R VJ VJM R RRM
V I = 150 A; T = 25C 1.55 V
F F VJ
V For power-loss calculations only 0.85 V
T0
r T = T 4.5 m
T VJ VJM
R DC current 1.05 K/W
thJC
R DC current 1.25 K/W
thJH
d Creepage distance on surface 4.05 mm
S
d Strike distance through air 3.9 mm
A
2
a Max. allowable acceleration 100 m/s
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
1 - 2
2000 IXYS All rights reservedDS 35 DSI 35
DSA 35 DSAI 35
250 1000 10000
50Hz, 80%V V = 0 V
RRM
R
2
8000
A 900A A s
typ. lim.
200 800
6000
I
F
2
700
I t
I
FSM
150 600 4000
T = 45C
VJ
T = 180C
VJ
500
T = 25C
VJ
100 400
T = 180C
VJ
300 2000
T = 45C
VJ
50 200
T = 180C
100 VJ
0 0 1000
-3 -2 -1 0
0.5 1.0 1.5 2.0 V 10 10 10 s 101123 4567 ms890
V t
t
F
2
Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms)
I : crest value, t: duration
FSM
100 60
A
W
R :
50
thJA
80
1.5 K/W
I
F(AV)M
P
F
1.9 K/W
40
60
2.3 K/W
3.9 K/W
30
40
DC
20
180 sin
120
60
20
10
30
0 0
0 20406080 A 00 50 100 150 C 200 0 40 80 120 160 C 200
I T T
amb
case
F(AV)M
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature 180 sine
2.0
K/W
R for various conduction angles d:
thJH
1.6
dR (K/W)
thJH
Z
thJH
DC 1.25
180 1.37
1.2
120 1.47
60 1.74
30 2.08
0.8
Constants for Z calculation:
thJH
0.4
iR (K/W) t (s)
thi i
1 0.10 0.0012
0.0
2 0.25 0.1181
-3 -2 -1 0 1 2
10 10 10 10 10 s 10
3 0.70 0.6540
t
4 0.20 2.0
Fig. 6 Transient thermal impedance junction to heatsink
2 - 2
2000 IXYS All rights reserved