DS 75 DSI 75 DSA 75 DSAI 75 V = 1200-1800 V Recti er Diode RRM I = 160 A Avalanche Diode F(RMS) I = 110 A F(AV)M Replacements see page 3 DO-203 AB V V V Anode Cathode RSM (BR)min RRM C A V V V on stud on stud DS DSI DSA DSAI 1300 - 1200 DS 75-12B DSI 75-12B A C 1300 1300 1200 DSA 75-12B DSAI 75-12B 1700 1760 1600 DSA 75-16B DSAI 75-16B 1900 1950 1800 DSA 75-18B DSAI 75-18B 1/4-28UNF Only for Avalanche Diodes A = Anode C = Cathode Symbol Test Conditions Maximum Ratings Features International standard package, I T = T 160 A F(RMS) VJ VJM JEDEC DO-203 AB (DO-5) I T = 100C 180 sine 110 A F(AV)M case Planar glassivated chips P DSA(I) types, T = T , t = 10 s 20 kW RSM VJ VJM p Applications I T = 45C t = 10 ms (50 Hz), sine 1400 A FSM VJ High power recti ers V = 0 t = 8.3 ms (60 Hz), sine 1500 A R Field supply for DC motors T = T t = 10 ms (50 Hz), sine 1250 A Power supplies VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 1310 A R Advantages 2 2 I t T = 45C t = 10 ms (50 Hz), sine 9800 A s VJ Space and weight savings 2 V = 0 t = 8.3 ms (60 Hz), sine 9450 A s R Simple mounting 2 T = T t = 10 ms (50 Hz), sine 7820 A s Improved temperature and power VJ VJM 2 V = 0 t = 8.3 ms (60 Hz), sine 7210 A s cycling R Reduced protection circuits T -40...+180 C VJ T 180 C VJM T -40...+180 C stg M Mounting torque 2.4-4.5 Nm d 21-40 lb.in. Dimensions in mm (1 mm = 0.0394 ) Weight 21 g 7 4.1 Symbol Test Conditions Characteristic Values I T = T V = V 6 mA R VJ VJM R RRM V I = 150 A T = 25C 1.17 V F F VJ V For power-loss calculations only 0.75 V T0 r T = T 2 m T VJ VJM R DC current 0.5 K/W thJC R DC current 0.9 K/W thJH -28 UNF d Creepage distance on surface 4.05 mm S d Strike distance through air 3.9 mm A 2 a Max. allowable acceleration 100 m/s Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 20190129c 1 - 3 2019 IXYS All rights reserved phase-out 11.3 max. 27 10 max. 13 max. 1.6 6 3 6.1 13 SW 17 max. 2 DS 75 DSI 75 DSA 75 DSAI 75 5 200 1500 104 10 50Hz, 80%V typ. lim. V = 0 V RRM R 2 A A A s T = 45C VJ 6 I FSM 150 I F 2 T = 180C T = 45C I t VJ VJ 1000 T = 180C VJ 4 T = 25C VJ 100 500 T = 180C VJ 2 50 3 4 0 0 1010 -3 -2 -1 0 0.0 0.5 1.0 1.5 V 10 10 10 s 10 1 2 3 4 5 6 7 m8 s910 V t t F 2 Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) I : crest value, t: duration FSM 200 200 A W R : thJA I F(AV)M DC 1 K/W 150 150 180 sin 120 1.2 K/W P F 60 1.6 K/W 30 2 K/W 3 K/W 100 100 4 K/W DC 180 sin 50 50 120 60 30 0 0 0 50 100 150 A 20000 50 100 150 C 200 0 40 80 120 160 C 200 T I T amb F(AV)M case Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case temperature 1.5 K/W 30 R for various conduction angles d: thJH 60 120 d R (K/W) Z 180 thJH thJH DC 1.0 DC 0.900 180 1.028 120 1.085 60 1.272 30 1.476 0.5 Constants for Z calculation: thJH i R (K/W) t (s) thi i 1 0.0731 0.0015 0.0 2 0.1234 0.0237 -3 -2 -1 0 1 2 3 s 10 10 10 10 10 10 10 3 0.4035 0.4838 t 4 0.3000 1.5 Fig. 6 Transient thermal impedance junction to heatsink 20190129c 2 - 3 2019 IXYS All rights reserved phase-out