DS 17 DSI 17
DSA 17 DSAI 17
V = 800-1800 V
Rectifier Diode
RRM
I = 40 A
F(RMS)
Avalanche Diode
I = 25 A
F(AV)M
DO-203 AA
V V V Anode Cathode
RSM (BR)min RRM
V V V on stud on stud C A
DS DSI
DSA DSAI
900 - 800 DS 17-08A DSI 17-08A
A C
1300 - 1200 DS 17-12A DSI 17-12A
1300 1300 1200 DSA 17-12A DSAI 17-12A
1700 1750 1600 DSA 17-16A DSAI 17-16A
1900 1950 1800 DSA 17-18A DSAI 17-18A
10-32UNF
Only for Avalanche Diodes
A = Anode C = Cathode
Symbol Test Conditions Maximum Ratings
I T = T 40 A
F(RMS) VJ VJM
I T = 125C; 180 sine 25 A Features
F(AV)M case
International standard package,
P DSA(I) types, T = T , t = 10 s7kW
RSM VJ VJM p
JEDEC DO-203 AA (DO-4)
Planar glassivated chips
I T = 45C; t = 10 ms (50 Hz), sine 370 A
FSM VJ
V = 0 t = 8.3 ms (60 Hz), sine 400 A
R
Applications
T = T t = 10 ms (50 Hz), sine 300 A
VJ VJM
Supplies for DC power equipment
V = 0 t = 8.3 ms (60 Hz), sine 320 A
R
DC supply for PWM inverter
2 2
Field supply for DC motors
I t T = 45C t = 10 ms (50 Hz), sine 680 A s
VJ
2
Battery DC power supplies
V = 0 t = 8.3 ms (60 Hz), sine 660 A s
R
2
T = T t = 10 ms (50 Hz), sine 450 A s
VJ VJM
Advantages
2
V = 0 t = 8.3 ms (60 Hz), sine 430 A s
R
Space and weight savings
T -40...+180 C Simple mounting
VJ
T 180 C Improved temperature and power
VJM
T -40...+180 C cycling
stg
Reduced protection circuits
M Mounting torque 2.2-2.8 Nm
d
19-25 lb.in.
Weight 6g Dimensions in mm (1 mm = 0.0394")
Symbol Test Conditions Characteristic Values
I T = T ; V = V 4mA
R VJ VJM R RRM
V I = 55 A; T = 25C 1.36 V
F F VJ
V For power-loss calculations only 0.85 V
T0
r T = T 8m
T VJ VJM
R DC current 1.5 K/W
thJC
R DC current 2.1 K/W
thJH
d Creepage distance on surface 2.05 mm
S
d Strike distance through air 2.05 mm
A
2
a Max. allowable acceleration 100 m/s
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
1 - 2
2000 IXYS All rights reservedDS 17 DSI 17
DSA 17 DSAI 17
100 400 1000
typ. lim. 50Hz, 80% V V = 0 V
R
RRM
2
800
A A A s
80
600
300 T = 45C
VJ
2
I t
I I
F
FSM
T = 45C
VJ
T = 180C
VJ
60 400
T = 25C
VJ
200
T = 180C
T = 180C
VJ
VJ
40
200
100
20
0 0 100
-3 -2 -1 0
0.20.4 0.60.8 1.01.2 1.41V.6 1.8 10 10 10 s 101123 4567 ms890
V t
t
F
2
Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms)
I : crest value, t: duration
FSM
50 40
R :
thJA
W
A
2.8 K/W
40
3.2 K/W
30
P
I
F F(AV)M
4,8 K/W
6.3 K/W
30
8.5 K/W
20
Cu 80x80
20
DC
180 sin
120
10
60
10
30
0 0
0 102030 40 A 5000 50 100 150 C 200 0 50 100 150 C
I T T
amb
case
F(AV)M
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature 180 sine
R for various conduction angles d:
thJH
K/W
dR (K/W)
thJH
DC 2.10
2
Z 180 2.23
thJH
120 2.33
60 2.53
30 2.72
Constants for Z calculation:
1
thJH
iR (K/W) t (s)
thi i
1 0.1006 0.0021
2 0.5311 0.0881
3 0.8683 2.968
0
-3 -2 -1 0 1 2
4 0.600 3.20
10 10 10 10 10 s 10
t
Fig. 6 Transient thermal impedance junction to heatsink
2 - 2
2000 IXYS All rights reserved