DSA30C100PN IXYS

DSA30C100PN preliminary V = 100 V RRM Schottky Diode Gen I = 2x 15 A FAV V = 0.73 V F High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C100PN Backside: isolated 1 2 3 Features / Advantages: Applications: Package: TO-220FP Very low Vf Rectifiers in switch mode power Isolation Voltage: V~ 2500 Extremely low switching losses supplies (SMPS) Industry standard outline Low Irm values Free wheeling diode in low voltage RoHS compliant Improved thermal behaviour converters Epoxy meets UL 94V-0 High reliability circuit operation Soldering pins for PCB mounting Low voltage peaks for reduced Base plate: Plastic overmolded tab protection circuits Reduced weight Low noise switching Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b 2020 IXYS all rights reservedDSA30C100PN preliminary Ratings Schottky Symbol Definition Conditions min. typ. max. Unit T = 25C 100 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 100 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 1 0 0 V T = 25C 250 A R R VJ V = 1 0 0 V T = 1 2 5 C 2.5 mA R VJ forward voltage drop V I = 1 5 A T = 25C 0.91 V F F VJ I = 3 0 A 1.08 V F T = C 0.73 V I = 1 5 A 125 F VJ I = 3 0 A 0.91 V F average forward current T = 1 2 0 C T = 1 7 5 C 15 A I FAV C VJ rectangular d = 0.5 V T = 1 7 5 C 0.46 V threshold voltage F0 VJ for power loss calculation only slope resistance r 12.4 m F thermal resistance junction to case 4.2 K/W R thJC thermal resistance case to heatsink K/W R 0.5 thCH P total power dissipation T = 25C 35 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 340 A I R FSM VJ junction capacitance V = 1 2 V f = 1 MHz T = 25C 146 pF C J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b 2020 IXYS all rights reserved