DSB20I15PA IXYS

DSB20I15PA preliminary V = 15 V RRM Schottky Diode Gen I = 20 A FAV V = 0.39 V F High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSB20I15PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 Very low Vf Rectifiers in switch mode power Industry standard outline Extremely low switching losses supplies (SMPS) RoHS compliant Low Irm values Free wheeling diode in low voltage Epoxy meets UL 94V-0 Improved thermal behaviour converters High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b 2020 IXYS all rights reservedDSB20I15PA preliminary Ratings Schottky Symbol Definition Conditions min. typ. max. Unit T = 25C 15 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 15 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 1 5 V T = 25C 5 mA R R VJ V = 1 5 V T = 1 0 0 C 40 mA R VJ forward voltage drop V I = 2 0 A T = 25C 0.48 V F F VJ I = 4 0 A 0.60 V F T = C 0.39 V I = 2 0 A 125 F VJ I = 4 0 A 0.54 V F average forward current T = 1 3 0 C T = 1 5 0 C 20 A I FAV C VJ rectangular d = 0.5 V T = 1 5 0 C 0.23 V threshold voltage F0 VJ for power loss calculation only slope resistance r 7.2 m F thermal resistance junction to case 1.75 K/W R thJC thermal resistance case to heatsink K/W R 0.5 thCH P total power dissipation T = 25C 70 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 390 A I R FSM VJ junction capacitance V = 3 V f = 1 MHz T = 25C 1.28 nF C J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b 2020 IXYS all rights reserved