DSEI120-12A I = 109 A FAVM Fast Recovery V = 1200 V RRM Epitaxial Diode (FRED) t = 40 ns rr TO-247 AD V V Type RSM RRM A C V V 1200 1200 DSEI 120-12A C A C A = Anode, C = Cathode Features Symbol Conditions Maximum Ratings International standard package I 100 A FRMS T = T VJ VJM JEDEC TO-247 AD I 109 A FAVM T = 60C rectangular, d = 0.5 C Planar passivated chips I 75 A FAV T = 95C rectangular, d = 0.5 C Very short recovery time I 1200 A FRM t < 10 s rep. rating, pulse width limited by T P VJM Extremely low switching losses I T = 45C t = 10 ms (50 Hz), sine 600 A Low I -values FSM VJ RM t = 8.3 ms (60 Hz), sine 660 A Soft recovery behaviour Epoxy meets UL 94V-0 T = 150C t = 10 ms (50 Hz), sine 540 A VJ t = 8.3 ms (60 Hz), sine 600 A Applications 2 2 I t T = 45C t = 10 ms (50 Hz), sine 1800 A s VJ 2 Antiparallel diode for high frequency t = 8.3 ms (60 Hz), sine 1800 A s switching devices 2 T = 150C t = 10 ms (50 Hz), sine 1450 A s VJ Anti saturation diode 2 t = 8.3 ms (60 Hz), sine 1500 A s Snubber diode T -40...+150 C Free wheeling diode in converters VJ and motor control circuits T 150 C VJM Rectifiers in switch mode power T -40...+150 C stg supplies (SMPS) P T = 25C 357 W tot C Inductive heating and melting M mounting torque 0.8...1.2 Nm d Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Weight typical 6 g Advantages Symbol Conditions Characteristic Values typ. max. High reliability circuit operation Low voltage peaks for reduced I V = V T = 25C 3 mA R R RRM VJ protection circuits V = 0.8V T = 25C 1.5 mA R RRM VJ Low noise switching V = 0.8V T = 125C 20 mA R RRM VJ Low losses V I = 70 A T = 150C 1.55 V F F VJ Operating at lower temperature or T = 25C 1.8 V space saving by reduced cooling VJ V for power-loss calculations only 1.2 V T0 r T = T 4.6 mW T VJ VJM R 0.35 K/W thJC R (version A) 0.25 K/W thCH R 35 K/W thJA t I = 1 A -di/dt = 200 A/s V = 30 V T = 25C 40 60 ns rr F R VJ I V = 350 V I = 75 A -di /dt = 200 A/s 25 30 A RM R F F L < 0.05 H T = 100C VJ Chip capability, limited to 70 A by leads Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. 20121114a 2012 IXYS All rights reserved 1 - 3DSEI120-12A 150 16 120 T = 100C VJ T = 100C VJ V = 600 V R 14 V = 600 V R 125 100 12 I = 140 A F 100 80 70 A 10 35 A I Q F r I I = 140 A F RM 75 8 60 70 A 35 A T = 150C A VJ C A 6 50 40 T = 100C VJ 4 25 20 2 T = 25C VJ 0 0 0 0.5 1.0 1.5 2.0 100 1000 0 200 400 600 800 1000 -di /dt As -di /dt As V V F F F Fig. 1 Forward current I vs. V Fig. 2 Reverse recovery charge Fig. 3 Peak reverse current F F Q versus -di /dt I versus -di /dt r F RM F 1.4 500 60 1.5 T = 100C T = 100C VJ VJ V = 600 V I = 100 A F R 450 50 1.2 400 40 1.0 t 1.0 fr V V FR FR I = 140 A t F fr t K rr 350 30 f 70 A s I RM 35 A 0.8 V ns 300 20 0.5 Q r 0.6 250 10 0.4 200 0 0.0 0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000 T C -di /dt A s -di /dt A s VJ F F Fig. 4 Dynamic parameters Fig. 5 Recovery time Fig. 6 Peak forward voltage Q , I versus T t versus -di /dt V and t versus -di /dt r RM VJ rr F FR fr F 1 D=0.7 0.5 Z thJC Constants for Z calculation: thJC 0.3 0.2 0.1 i R (K/W) t (s) 0.01 thi i K/W 1 0.017 0.00038 0.05 2 0.0184 0.0026 Single Pulse 3 0.1296 0.0387 4 0.185 0.274 0.01 0.001 0.01 0.1 1 10 t s Fig. 7 Transient thermal resistance junction to case at various duty cycles IXYS reserves the right to change limits, test conditions and dimensions. 20121114a 2012 IXYS All rights reserved 2 - 3