DSEI2x101-12A IXYS

DSEI2x101-12A V = 1200 V RRM FRED I = 2x 99 A FAV t = 40 ns rr Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-12A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Antiparallel diode for high frequency Isolation Voltage: V~ 3000 Low leakage current switching devices Industry standard outline Very short recovery time Antisaturation diode RoHS compliant Improved thermal behaviour Snubber diode Epoxy meets UL 94V-0 Very low Irm-values Free wheeling diode Base plate: Copper Very soft recovery behaviour Rectifiers in switch mode power internally DCB isolated Avalanche voltage rated for reliable operation supplies (SMPS) Advanced power cycling Soft reverse recovery for low EMI/RFI Uninterruptible power supplies (UPS) Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a 2013 IXYS all rights reservedDSEI2x101-12A Ratings Fast Diode Symbol Definition Conditions min. typ. max. Unit T = 25C 1200 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1200 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 1 2 0 0 V T = 25C 3 mA R R VJ V = 9 6 0 V T = 1 2 5 C 15 mA R VJ forward voltage drop V I = 1 0 0 A T = 25C 1.87 V F F VJ I = 2 0 0 A 2.13 V F T = C 1.61 V I = 1 0 0 A 150 F VJ I = 2 0 0 A 1.92 V F average forward current T = 5 0 C T = 1 5 0 C 99 A I FAV C VJ rectangular d = 0.5 V T = 1 5 0 C 1.01 V threshold voltage F0 VJ for power loss calculation only slope resistance r 6.1 m F thermal resistance junction to case 0.5 K/W R thJC thermal resistance case to heatsink K/W R 0.10 thCH P total power dissipation T = 25C 250 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 900 A I R FSM VJ junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 107 pF C J R VJ I max. reverse recovery current T = 25 C 38 A RM VJ I = 100 A V = 600 V T = 100C 52 A F R VJ reverse recovery time -di /dt = 600A/s T = 25 C 150 ns t rr F VJ T = 100C 255 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a 2013 IXYS all rights reserved