DSEI2x61-06P IXYS

DSEI 2x61 I = 2x60 A Fast Recovery FAVM V = 600 V RRM Epitaxial Diode (FRED) t = 35 ns rr V V Type RSM RRM V V 600 600 DSEI 2x 61-06P D5 Symbol Conditions Maximum Ratings (per diode) Features 2 independent FRED in 1 package I T = T 100 A FRMS VJ VJM Isolation voltage 3000 V~ I T = 70C rectangular d = 0.5 60 A FAVM C Planar passivated chips I t < 10 s rep. rating pulse width limited by T 800 A FRM P VJM Leads suitable for PC board soldering I T = 45C t = 10 ms (50 Hz), sine 550 A FSM VJ Very short recovery time Soft recovery behaviour T -40...+150 C VJ T 150 C VJM Applications T -40...+150 C stg Antiparallel diode for high frequency P T = 25C 180 W tot C switching devices Anti saturation diode V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL Snubber diode I 1 mA t = 1 s 3000 V~ ISOL Free wheeling diode in converters M Mounting torque (M4) 1.5 - 2.0 Nm d and motor control circuits 14 - 18 lb.in. Rectifiers in switch mode power supplies (SMPS) Weight 18 g Inductive heating and melting Uninterruptible power supplies (UPS) Symbol Conditions Characteristic Values (per diode) Ultrasonic cleaners and welders typ. max. Advantages I T = 25CV = V 200 A R VJ R RRM T = 25CV = 0.8 V 100 A VJ R RRM Easy to mount with two screws T = 125CV = 0.8 V 14 mA VJ R RRM Space and weight savings Improved temperature and power V I = 60 A T = 150C1.5V F F VJ T = 25C1.8V cycling capability VJ Low noise switching V For power-loss calculations only 1.13 V T0 Small and light weight r T = T 4.7 m T VJ VJM R 0.7 K/W thJC R 0.05 K/W thCK t I = 1 A -di/dt = 200 A/s 35 50 ns rr F V = 30 V T = 25C R VJ I V = 350 V I = 60 A -di /dt = 480 A/s 19 21 A RM R F F L 0.05 H T = 100C VJ d Creeping distance on surface min. 11.2 mm S d Creeping distance in air min. 11.2 mm A a Allowable acceleration max. 50 m/s I rating includes reverse blocking losses at T , V = 0.8 V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 2001 IXYS All rights reserved 1 - 2 139DSEI 2x 61-06P D5 Fig. 1 Forward current Fig. 2 Recovery charge versus -di /dt. Fig. 3 Peak reverse current versus F versus voltage drop. -di /dt. F Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -di /dt. Fig. 6 Peak forward voltage F junction temperature. versus di /dt. F Dimensions Fig. 7 Transient thermal impedance junction to case. 2001 IXYS All rights reserved 2 - 2