DSEI2X61-12P IXYS

DSEI 2x61 I = 2x52 A Fast Recovery FAVM V = 1200 V RRM Epitaxial Diode (FRED) t = 40 ns rr V V Type RSM RRM V V 1200 1200 DSEI 2x 61-12P D5 Symbol Conditions Maximum Ratings (per diode) Features 2 independent FRED in 1 package I T = T 100 A FRMS VJ VJM Isolation voltage 3000 V~ I T = 50C rectangular d = 0.5 52 A FAVM C Planar passivated chips I t < 10 s rep. rating pulse width limited by T 700 A FRM P VJM Leads suitable for PC board soldering I T = 45C t = 10 ms (50 Hz), sine 450 A FSM VJ Very short recovery time Soft recovery behaviour T -40...+150 C VJ T 150 C VJM Applications T -40...+150 C stg Antiparallel diode for high frequency P T = 25C 180 W tot C switching devices Anti saturation diode V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL Snubber diode I 1 mA t = 1 s 3000 V~ ISOL Free wheeling diode in converters M Mounting torque (M4) 1.5 - 2.0 Nm d and motor control circuits 14 - 18 lb.in. Rectifiers in switch mode power supplies (SMPS) Weight 18 g Inductive heating and melting Uninterruptible power supplies (UPS) Symbol Conditions Characteristic Values (per diode) Ultrasonic cleaners and welders typ. max. Advantages I T = 25CV = V 2.2 mA R VJ R RRM T = 25CV = 0.8 V 0.5 mA VJ R RRM Easy to mount with two screws T = 125CV = 0.8 V 14 mA VJ R RRM Space and weight savings Improved temperature and power V I = 60 A T = 150C 2.15 V F F VJ T = 25C 2.50 V cycling capability VJ Low noise switching V For power-loss calculations only 1.65 V T0 Small and light weight r T = T 8.3 m T VJ VJM R 0.7 K/W thJC R 0.05 K/W thCK t I = 1 A -di/dt = 200 A/s 40 60 ns rr F V = 30 V T = 25C R VJ I V = 540 V I = 60 A -di /dt = 480 A/s 32 36 A RM R F F L 0.05 H T = 100C VJ d Creeping distance on surface min. 11.2 mm S d Creeping distance in air min. 11.2 mm A a Allowable acceleration max. 50 m/s I rating includes reverse blocking losses at T , V = 0.8 V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 2001 IXYS All rights reserved 1 - 2 139DSEI 2x 61-12P 90 12 80 T =100C VJ T =100C C VJ A A V = 540V 80 R V =540V R T = 25C VJ 10 max. T =100C 70 VJ 60 T =150C VJ I =60A I =60A F F 60 8 I I =120A I =120A RM I F F Q F r I =60A I =60A F F 50 I =30A I =30A F F 6 40 40 30 4 typ. max. 20 20 2 typ. 10 0 0 0 V 0 1234 10 100 A/s 1000 0 200 400 600 A/800s 1000 V -di /dt F -di /dt F F D5 Fig. 1 Forward current Fig. 2 Recovery charge versus -di /dt. Fig. 3 Peak reverse current versus F versus voltage drop. -di /dt. F 1.4 1.0 60 1200 T =100C VJ V ns s V =540V R 1.2 50 1000 0.8 V max. FR 1.0 I =60A 40 800 F I t RM K rr I =120A V f 0.6 F FR t fr 0.8 I =60A F 30 600 I =30A F 0.6 0.4 Q 400 R 20 0.4 t fr 0.2 10 200 0.2 typ. T =125C VJ I =60A F 0 0.0 0.0 0 040 80 120 C160 0 200 400 600 A/800s 1000 0 200 400 600 A/800s 1000 T -di /dt J di /dt F F Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -di /dt. Fig. 6 Peak forward voltage F junction temperature. versus di /dt. F Dimensions Fig. 7 Transient thermal impedance junction to case. 2001 IXYS All rights reserved 2 - 2