DSEI 60 I = 69 A Fast Recovery FAVM V = 200 V RRM Epitaxial Diode (FRED) t = 35 ns rr TO-247 AD C A V V Type RSM RRM V V C 200 200 DSEI 60-02A A C A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings Features I T = T 98 A International standard package FRMS VJ VJM I T = 85 C rectangular, d = 0.5 69 A JEDEC TO-247 AD FAVM C I t < 10 s rep. rating, pulse width limited by T 800 A Planar passivated chips FRM P VJM Very short recovery time I T = 45 C t = 10 ms (50 Hz), sine 600 A FSM VJ Extremely low switching losses t = 8.3 ms (60 Hz), sine 650 A Low I -values RM T = 150 C t = 10 ms (50 Hz), sine 540 A VJ Soft recovery behaviour t = 8.3 ms (60 Hz), sine 580 A Epoxy meets UL 94V-0 2 2 I t T = 45 C t = 10 ms (50 Hz), sine 1800 A s VJ 2 t = 8.3 ms (60 Hz), sine 1770 A s Applications 2 T = 150 C t = 10 ms (50 Hz), sine 1460 A s VJ 2 t = 8.3 ms (60 Hz), sine 1410 A s Antiparallel diode for high frequency switching devices T -40...+150 C VJ Anti saturation diode T 150 C VJM Snubber diode T -40...+150 C stg Free wheeling diode in converters P T = 25 C 150 W tot C and motor control circuits M Mounting torque 0.8...1.2 Nm Rectifiers in switch mode power d supplies (SMPS) Weight 6g Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Symbol Test Conditions Characteristic Values typ. max. Advantages I T = 25 CV = V 50 A R VJ R RRM T = 25 CV = 0.8 V 40 A VJ R RRM High reliability circuit operation T = 125 CV = 0.8 V 11 mA VJ R RRM Low voltage peaks for reduced V I = 60 A T = 150 C 0.88 V F F VJ protection circuits T = 25 C 1.08 V VJ Low noise switching V For power-loss calculations only 0.70 V Low losses T0 r T = T 4.0 m Operating at lower temperature or T VJ VJM space saving by reduced cooling R 0.75 K/W thJC R 0.25 K/W thCK R 35 K/W thJA t I = 1 A -di/dt = 200 A/ s V = 30 V T = 25 C35 50 ns rr F R VJ I V = 100 V I = 60 A -di /dt = 200 A/ s 8 10 A RM R F F L 0.05 H T = 100 C VJ I rating includes reverse blocking losses at T , V = 0.8 V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 2000 IXYS All rights reserved 1 - 2 036 DSEI 60, 200V 160 0.8 30 T = 100C T = 100C VJ VJ A A V = 100V V = 100V 140 R R C 25 Q r I RM 120 0.6 I F I = 35A F 20 100 I = 70A F I = 35A I =140A F F I = 70A 80 0.4 15 F I =140A T =150C F VJ 60 10 T =100C VJ 40 0.2 5 20 T =25C VJ 0 0.0 0 0.0 0.4 0.8 1.2 10 100 1000 0 200 400 600 A/800ms 1000 V A/ms V -di /dt -di /dt F F F Fig. 1 Forward current I versus V Fig. 2 Typ. reverse recovery charge Q Fig. 3 Typ. peak reverse current I F F r RM versus -di /dt versus -di /dt F F 1.6 70 5 2.5 T = 100C T = 100C VJ ns VJ V s I = 100A V = 100V F R 1.4 60 4 2.0 K f V t FR rr t fr 1.2 50 t V fr FR 3 1.5 1.0 40 I =35A F 0.8 30 I =70A F 2 1.0 I RM I =140A F 0.6 20 1 0.5 Q r 0.4 10 0.2 0 0 0.0 A/ms 0 40 80 120 C 160 0 200 400 600 A/800ms 1000 0 200 400 600 800 -di /dt di /dt T F F VJ Fig. 4 Dynamic parameters Q , I Fig. 5 Typ. recovery time t Fig. 6 Typ peak forward voltage r RM rr versus T versus -di /dt V and t versus di /dt VJ F FR fr F 1.0 Dim. Millimeter Inches Dimensions K/W Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 0.8 B 20.80 21.46 0.819 0.845 Z thJC C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 0.6 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 0.4 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 0.2 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 DSEI 60-02 N 2.2 2.54 0.087 0.102 0.0 s 0.001 0.01 0.1 1 10 t Fig. 7 Transient thermal impedance junction to case 2000 IXYS All rights reserved 2 - 2 839