DSEI60-06A DSEI60-06AT I = 60 A FAV Fast Recovery V = 600 V RRM Epitaxial Diode (FRED) t = 35 ms rr TO-247 AD V V Type RSM RRM A C V V C 600 600 DSEI 60-06A A C 600 600 DSEI 60-06AT TO-268 AA (AT Type) A A C A = Anode, C = Cathode Features Symbol Conditions Maximum Ratings International standard package I 00 A FRMS JEDEC TO-247 AD I T = 70C rectangular, d = 0.5 60 A FAVM C Planar passivated chips I t < 0 s rep. rating, pulse width limited by T FRM p VJM Very short recovery time I T = 45C t = 0 ms (50 Hz), sine 550 A FSM VJ Extremely low switching losses t = 8.3 ms (60 Hz), sine 600 Low IRM-values Soft recovery behaviour T = 50C t = 0 ms (50 Hz), sine 480 A VJ Epoxy meets UL 94V-0 t = 8.3 ms (60 Hz), sine 520 2 2 I t T = 45C t = 0 ms (50 Hz), sine 5 0 A s VJ Applications t = 8.3 ms (60 Hz), sine 490 Antiparallel diode for high frequency 2 T = 50C t = 0 ms (50 Hz), sine 50 A s VJ switching devices t = 8.3 ms (60 Hz), sine 20 Anti saturation diode T -55...+ 50 C VJ Snubber diode T 50 C VJM Free wheeling diode in converters T -55...+ 50 C stg and motor control circuits Rectifiers in switch mode power P T = 25C 66 W tot C supplies (SMPS) M mounting torque 0.8..2 Nm d Inductive heating and melting Weight typical 6 g Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Symbol Conditions Characteristic Values Advantages typ. max. High reliability circuit operation I V = V T = 25C 200 A R R RRM VJ Low voltage peaks for reduced V = 0.8V T = 25C 00 A R RRM VJ protection circuits V = 0.8V T = 25C 4 mA R RRM VJ Low noise switching V I = 70 A T = 50C .5 V Low losses F F VJ T = 25C .8 V Operating at lower temperature or VJ space saving by reduced cooling V For power-loss calculations only . 3 V T0 r T = T 4.7 mW T VJ VJM R 0.75 K/W thJC R (version A) 0.25 K/W thCH t I = A -di/dt = 200 A/s V = 30 V T = 25C 35 50 ns rr F R VJ I V = 350 V I = 60 A -di /dt = 480 A/s 6.0 7.5 A RM R F F L < 0.05 H T = 00C VJ I rating includes reverse blocking losses at T . V = 0.8V , duty cycle d = 0.5 FAVM VJM R RRM IXYS reserves the right to change limits, test conditions and dimensions. 2007 IXYS All rights reserved - 3 200704 9DSEI 60-06A DSEI 60-06AT Fig. 1 Forward current Fig. 2 Recovery charge versus -di /dt. Fig. 3 Peak reverse current versus F versus voltage drop. -di /dt. F Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -di /dt. Fig. 6 Peak forward voltage F junction temperature. versus di /dt. F Fig. 7 Transient thermal impedance junction to case. IXYS reserves the right to change limits, test conditions and dimensions 2007 IXYS All rights reserved 2 - 2 0549