DSEI 8-06A DSEI 8-06AS I = 8 A FAV Fast Recovery V = 600 V RRM Epitaxial Diode (FRED) t = 35 ns rr TO-220 AC V V Type RSM RRM A C DSEI 8-06A V V C A 640 600 DSEI 8-06A C TO-263 AB 640 600 DSEI 8-06AS DSEI 8-06AS NC A = Anode, C = Cathode, A NC = No Connection, C (TAB) TAB = Cathode Features Symbol Conditions Maximum Ratings International standard package I T = T 16 A FRMS VJ VJM JEDEC TO-220 AC & TO-283 AB I T = 115C rectangular, d = 0.5 8 A FAVM C Planar passivated chips I t < 10 s rep. rating, pulse width limited by T 130 A FRM p VJM Very short recovery time I T = 45C t = 10 ms (50 Hz), sine 100 A FSM VJ Extremely low switching losses t = 8.3 ms (60 Hz), sine 110 Low I -values RM Soft recovery behaviour T = 150C t = 10 ms (50 Hz), sine 85 A VJ Epoxy meets UL 94V-0 t = 8.3 ms (60 Hz), sine 95 2 2 I t T = 45C t = 10 ms (50 Hz), sine 50 A s VJ Applications t = 8.3 ms (60 Hz), sine 50 Antiparallel diode for high frequency 2 T = 150C t = 10 ms (50 Hz), sine 36 A s VJ switching devices t = 8.3 ms (60 Hz), sine 37 Anti saturation diode T -40...+150 C VJ Snubber diode T 150 C VJM Free wheeling diode in converters T -40...+150 C stg and motor control circuits Recti ers in switch mode power P T = 25C 50 W tot C supplies (SMPS) M mounting torque 0.4...0.6 Nm d Inductive heating and melting Weight typical 2 g Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Symbol Conditions Characteristic Values Advantages typ. max. High reliability circuit operation I V = V T = 25C 20 A R R RRM VJ Low voltage peaks for reduced V = 0.8V T = 25C 10 A R RRM VJ protection circuits V = 0.8V T = 125C 1.5 mA R RRM VJ Low noise switching V I = 8 A T = 150C 1.3 V Low losses F F VJ T = 25C 1.5 V VJ Operating at lower temperature or space saving by reduced cooling V For power-loss calculations only 0.98 V T0 r T = T 28.7 m T VJ VJM R 2.5 K/W thJC R 0.5 K/W thCH R 60 K/W thJA t I = 1 A -di/dt = 50 A/s V = 30 V T = 25C 35 50 ns rr F R VJ I V = 350 V I = 8 A -di /dt = 64 A/s 2.5 2.8 A RM R F F L < 0.05 H T = 100C VJ I rating includes reverse blocking losses at T . V = 0.8V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. 20090106a 2009 IXYS All rights reserved 1 - 3DSEI 8-06A DSEI 8-06AS 30 1.0 25 T = 100C T = 100C VJ VJ max V = 350 V V = 350 V R R 0.8 20 max I = 8 A F 20 16 A 0.6 15 I = 8 A I Q RM F 8 A r I F 16 A 4 A 8 A A T = 150C C 0.4 10 VJ 4 A A 100C 10 25C 0.2 5 typ. typ. 0 0.0 0 0 1 2 1 10 100 1000 0 100 200 300 400 V V -di /dt A/s -di /dt A/s F F F Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current I versus V Q versus -di /dt I versus -di /dt F F r F RM F 1.4 0.4 20 1000 T = 100C VJ V = 350 V 1.2 R 800 16 0.3 max 1.0 I = 8 A F 12 600 V t FR rr T = 125C 16 A VJ K 0.8 0.2 t f 8 A I = 8 A fr F s V 4 A 8 400 I RM 0.6 Q ns r 0.1 200 4 0.4 t fr V FR typ. 0.2 0.0 0 0 0 40 80 120 160 0 100 200 300 400 0 100 200 300 T C -di /dt A/s -di /dt A/s VJ F F Fig. 4 Dyn. parameters Fig. 5 Typ. recovery time Fig. 6 Typ. peak forward voltage Q I versus T V and t versus di /dt r, RM VJ t versus -di /dt FR fr F rr F 3.0 2.5 2.0 Z thJC 1.5 k/W 1.0 0.5 0.0 0.001 0.01 0.1 1 10 t s Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions. 20090106a 2009 IXYS All rights reserved 2 - 3