DSEK 60 I = 2x 26 A Common Cathode FAVM V = 1200 V RRM Fast Recovery t = 40 ns rr Epitaxial Diode (FRED) TO-247 AD V V Type RSM RRM V V A C 1200 1200 DSEK 60-12A A C A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings Features International standard package I T = T 50 A FRMS VJ VJM I T = 85 C rectangular, d = 0.5 26 A JEDEC TO-247 AD FAVM C I t < 10 s rep. rating, pulse width limited by T 375 A Planar passivated chips FRM P VJM Very short recovery time I T = 45 C t = 10 ms (50 Hz), sine 200 A FSM VJ Extremely low switching losses t = 8.3 ms (60 Hz), sine 210 A Low I -values RM T = 150 C t = 10 ms (50 Hz), sine 185 A VJ Soft recovery behavior t = 8.3 ms (60 Hz), sine 195 A Epoxy meets UL 94V-0 2 2 I t T = 45 C t = 10 ms (50 Hz), sine 200 A s VJ 2 t = 8.3 ms (60 Hz), sine 180 A s 2 T = 150 C t = 10 ms (50 Hz), sine 170 A s Applications VJ 2 t = 8.3 ms (60 Hz), sine 160 A s Rectifiers in switch mode power T -40...+150 C VJ supplies (SMPS) T 150 C VJM Uninterruptible power supplies (UPS) T -40...+150 C stg Ultrasonic cleaners and welders P T = 25 C 125 W tot C M Mounting torque 0.8...1.2 Nm d Advantages Weight 6g High reliability circuit operation Low voltage peaks for reduced Symbol Test Conditions Characteristic Values protection circuits typ. max. Low noise switching I T = 25 CV = V 750 A Low losses R VJ R RRM T = 25 CV = 0.8 V 250 A VJ R RRM Operating at lower temperature or T = 125 CV = 0.8 V 7mA VJ R RRM space saving by reduced cooling V I = 30 A T = 150 C 2.2 V F F VJ T =25 C 2.55 V VJ V For power-loss calculations only 1.65 V T0 r T = T 18.2 m T VJ VJM R 0.9 K/W thJC R 0.25 K/W thCK R 70 K/W thJA t I = 1 A -di/dt = 100 A/ s V = 30 V T = 25 C40 60 ns rr F R VJ I V = 540 V I = 30 A -di /dt = 240 A/ s16 18 A RM R F F L 0.05 H T = 100 C VJ I rating includes reverse blocking losses at T , V = 0.8 V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions 2000 IXYS All rights reserved 1 - 2 036DSEK 60, 1200 V 70 6 50 T =100C VJ T =100C A C VJ A V = 540V R V = 540V 60 R 5 40 max. I =30A 50 I I =30A F RM F 4 I =60A I I =60A F F F Q T =25C r VJ 30 I =30A I =30A F 40 F T =100C VJ I =15A I =15A F 3 F T =150C VJ 30 20 2 typ. 20 max. 10 1 typ. 10 0 0 0 0 1234 1 10 100 1000 V A/s 0 200 400 A/s 600 V -di /dt -di /dt F F F Fig. 1 Forward current Fig. 2 Recovery charge versus -di /dt. Fig. 3 Peak reverse current versus F versus voltage drop. -di /dt. F 1.4 1.0 60 1200 T =100C VJ ns V s V =540V 1.2 R 50 1000 0.8 V FR 1.0 I =30A max. I F 40 800 RM t K rr I =60A f F V 0.6 FR t fr 0.8 I =30A F 600 30 I =15A F 0.6 0.4 Q R 400 20 0.4 t fr 0.2 10 200 typ. 0.2 T =125C VJ I =30A F 0 0.0 0.0 0 0 40 80 120 C 160 0 200 400 A/s 600 0 200 400 A/s 600 T -di /dt J di /dt F F Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -di /dt. Fig. 6 Peak forward voltage F junction temperature. versus di /dt. F 1.0 Dimensions Dim. Millimeter Inches K/W Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 0.8 B 20.80 21.46 0.819 0.845 Z thJC C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 0.6 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 0.4 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 0.2 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M M 0.4 0.8 0.016 0.031 0.0 N N 2.2 2.54 0.087 0.102 s 0.001 0.01 0.1 1 10 t Fig. 7 Transient thermal impedance junction to case. 2000 IXYS All rights reserved 2 - 2