DSEP 29-06A DSEP 29-06AS DSEP 29-06B TM I = 30 A HiPerFRED Epitaxial Diode FAV V = 600 V with soft recovery RRM t = 30/35 ns rr TO-220 AC V V Type A C RSM RRM V V C A C (TAB) 600 600 DSEP 29-06A 600 600 DSEP 29-06AS TO-263 600 600 DSEP 29-06B C (TAB) A A A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings Features International standard package I 35 A FRMS Planar passivated chips I rect., d = 0.5 T (Version A, AS)= 135C 30 A FAVM C Very short recovery time T (Version B) = 125C 30 A C l Extremely low switching losses I T = 45C t = 10 ms (50 Hz), sine (Version A, AS) 250 A FSM VJ p Low I -values RM (Version B) 200 A Soft recovery behaviour E T = 25C non-repetitive 0.2 mJ Epoxy meets UL 94V-0 AS VJ I = 1.3 A L = 180 H AS Applications I V = 1.5V typ. f = 10 kHz repetitive 0.1 A AR A R Antiparallel diode for high frequency T -55...+175 C VJ switching devices T 175 C VJM Antisaturation diode T -55...+150 C stg Snubber diode P T = 25C 165 W Free wheeling diode in converters tot C and motor control circuits M mounting torque (Version A, B) 0.4...0.6 Nm d Rectifiers in switch mode power Weight typical 2 g supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Symbol Conditions Characteristic max. Values Ultrasonic cleaners and welders Version A Version B Advantages I T = 25C V = V 250 250 A R VJ R RRM Avalanche voltage rated for reliable T = 150C V = V 12mA VJ R RRM operation V I = 30 A T = 150C 1.26 1.58 V F F VJ Soft reverse recovery for low T = 25C 1.61 2.52 V VJ EMI/RFI Low I reduces: R 0.9 0.9 K/W thJC RM R typ. 0.5 0.5 K/W - Power dissipation within the diode thCH - Turn-on loss in the commutating switch t typ. I = 1 A -di/dt = 200 A/s 35 30 ns rr F V = 30 V T = 25C R VJ I typ. V = 100 V I = 50 A 6 4 A Dimensions see Outlines.pdf RM R F -di /dt = 100 A/s T = 100C F VJ Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions. 2004 IXYS All rights reserved 1 - 3 417DSEP 29-06A DSEP 29-06AS 70 3000 50 T = 100C T = 100C VJ VJ A nC A V = 300V V = 300V R R 60 2500 40 I Q RM r I 50 F 2000 T =150C VJ I = 60A 30 F 40 I = 60A I = 30A F F T =100C 1500 VJ I = 30A I = 15A F F 30 I = 15A F 20 1000 20 10 500 10 T =25C VJ 0 0 0 0.0 0.5 1.0 1.5 V2.0 100 1000 0 200 400 600 A/800s 1000 A/s V -di /dt -di /dt F F F Fig. 1 Forward current I versus V Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F F r RM versus -di /dt versus -di /dt F F 2.0 130 20 1.2 T = 100C VJ ns V = 300V R V s 120 V t FR fr t 1.5 15 0.9 rr V t FR I = 60A K F fr f 110 I = 30A F I = 15A F 1.0 100 10 0.6 I RM 90 0.5 5 0.3 Q r 80 T = 100C VJ I = 30A F 0.0 70 0 0.0 0 40 80 120 C 160 0 200 400 600 800 1000 0 200 400 600 A/800s 1000 A/s di /dt T -di /dt F VJ F Fig. 4 Dynamic parameters Q , I Fig. 5 Recovery time t versus -di /dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus T versus di /dt VJ F 1 Constants for Z calculation: thJC K/W iR (K/W) t (s) thi i 1 0.502 0.0052 0.1 2 0.193 0.0003 Z thJC 3 0.205 0.0162 0.01 DSEP 29-06A NOTE: Fig. 2 to Fig. 6 shows typical values 0.001 s 0.00001 0.0001 0.001 0.01 0.1 1 t Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. 2004 IXYS All rights reserved 2 - 3 417