DSI 30 V = 800 - 1200 V Rectifier Diode RRM I = 30 A TM F(AV)M ISOPLUS220 Electrically Isolated Back Surface V V Type RSM RRM V V TM ISOPLUS 220 900 800 DSI 30-08AC A C 1300 1200 DSI 30-12AC Preliminary Data Sheet C A Isolated back surface* Symbol Conditions Maximum Ratings Features I 60 A FRMS Silicon chip on Direct-Copper-Bond O I T = 95C 180 sine (RMS current limited) 30 A FAV C substrate - High power dissipation I T = 45C t = 10 ms (50 Hz), sine 200 A FSM VJ - Isolated mounting surface V = 0 V t = 8.3 ms (60 Hz), sine 210 A R - 2500V electrical isolation T = 150C t = 10 ms (50 Hz), sine 175 A Low cathode to tab capacitance(15pF VJ typical) V = 0 V t = 8.3 ms (60 Hz), sine 185 A R International standard package 2 2 I t T = 45C t = 10 ms (50 Hz), sine 200 A s VJ Epoxy meets UL 94V-0 2 V = 0 V t = 8.3 ms (60 Hz), sine 185 A s R ISOPLUS220 Outline (2 leads) 2 T = 150C t = 10 ms (50 Hz), sine 155 A s VJ 2 V = 0 V t = 8.3 ms (60 Hz), sine 145 A s R T -55...+150 C VJ T 150 C VJM T -55...+150 C stg T 1.6 mm (0.062 in.) from case for 10 s 260 C L V 50/60 Hz RMS I 1 mA 2500 V~ ISOL ISOL F Mounting Force 11...65 / 2.4...11 N / ib C Weight typical 2 g Symbol Conditions Characteristic Values typ. max. I T = 25C V = V 0.05 mA R VJ R RRM T = T V = V 1.5 mA VJ VJM R RRM V I = 45 A T = 25C 1.45 V F F VJ V For power loss calculations only 0.80 V TO r T = T 15 m T VJ VJM R 1.1 K/W thJC R 0.6 K/W thCH Note: See DSI 30..A data sheet for electrical characteristic curves. IXYS reserves the right to change limits, conditions and dimensions. DS98791A(07/03) 2003 IXYS All rights reserved