DSI30-12AS V = 1200 V RRM Standard Rectifier I = 30 A FAV V = 1.25 V F Single Diode Part number DSI30-12AS Backside: cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) Planar passivated chips Diode for main rectification Industry standard outline Very low leakage current For single and three phase RoHS compliant Very low forward voltage drop bridge configurations Epoxy meets UL 94V-0 Improved thermal behaviour Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments - the conclusion of quality agreements - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130107a 2013 IXYS all rights reservedDSI30-12AS Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1300 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1200 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 2 0 0 V T = 25C 40 A R VJ R V = 1 2 0 0 V T = 1 5 0 C 1.5 mA R VJ forward voltage drop V I = 3 0 A T = 25C 1.29 V F F VJ I = 6 0 A 1.60 V F T = C 1.25 V I = 3 0 A 150 F VJ I = 6 0 A 1.66 V F average forward current T = 1 3 0 C T = 1 7 5 C 30 A I FAV C VJ rectangular d = 0.5 V T = 1 7 5 C 0.82 V threshold voltage F0 VJ for power loss calculation only slope resistance r 14.1 m F thermal resistance junction to case 0.9 K/W R thJC thermal resistance case to heatsink K/W R 0.25 thCH P total power dissipation T = 25C 160 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 300 A I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 325 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 255 VJ t = 8,3 ms (60 Hz), sine V = 0 V 275 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 450 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 440 As R t = 10 ms (50 Hz), sine T = 1 5 0 C 325 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 315 As R V = 4 0 0 V f = 1 MHz T = 25C 10 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130107a 2013 IXYS all rights reserved