DSS10-0045B IXYS

DSS 10-0045B I = 10 A Power Schottky Rectifier FAV V = 45 V RRM V = 0.46 V F TO-220 AC V V Type AC RSM RRM V V C C (TAB) A 45 45 DSS 10-0045B A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings Features International standard package I 35 A FRMS Very low V F I T = 135C rectangular, d = 0.5 10 A FAV C Extremely low switching losses Low I -values I T = 45C t = 10 ms (50 Hz), sine 160 A RM FSM VJ p Epoxy meets UL 94V-0 E I = 13 A L = 180 H T = 25C non repetitive 24 mJ AS AS VJ I V =1.5 V typ. f=10 kHz repetitive 1.3 A AR A RRM Applications Rectifiers in switch mode power (dv/dt) 1000 V/ s cr supplies (SMPS) T -55...+150 C VJ Free wheeling diode in low voltage T 150 C VJM converters T -55...+150 C stg P T = 25C75W tot C Advantages M mounting torque 0.4...0.6 Nm High reliability circuit operation d Low voltage peaks for reduced Weight typical 2 g protection circuits Low noise switching Low losses Symbol Conditions Characteristic Values typ. max. Dimensions see Outlines.pdf I T = 25C V = V 5mA R VJ R RRM T = 100C V = V 50 mA VJ R RRM V I = 10 A T = 125C 0.46 V F F VJ I = 10 A T = 25C 0.51 V F VJ I = 20 A T = 125C 0.64 V F VJ R 1.7 K/W thJC R 0.5 K/W thCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions. 2003 IXYS All rights reserved 1 - 2 338DSS 10-0045B 100 1000 1000 mA A pF T =150C VJ 100 I R C T I 125C F 10 100C 10 75C 1 50C T = VJ 150C 0.1 125C 25C 25C T = 25C VJ 1 0.01 100 0.0 0.2 0.4 0.6 0.8 V 1.0 010 20 30 40 0 1020 30405V 0 V V V V R F R Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics versus reverse voltage V versus reverse voltage V R R 40 40 W A A 30 30 I FSM I F(AV) P (AV) d=0.5 DC 20 20 d = DC 0.5 10 10 0.33 0.25 0.17 0.08 0 0 A 0 102030 s 0 40 80 120 C 160 T I t C F(AV) P Fig. 4 Average forward current I Fig. 5 Forward power loss F(AV) versus case temperature T characteristics C 1 D=0.5 0.33 K/W 0.25 Z 0.17 thJC 0.08 0.1 Single Pulse DSS 10-0045B 0.01 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode 2003 IXYS All rights reserved 2 - 2