DSS10-01A IXYS

DSS 10-01A DSS 10-01AS I =10 A Power Schottky Rectifier FAV V = 100 V RRM V = 0.66 V F TO-263 AB TO-220 AC V V Type AC RSM RRM (...S-Type) V V 100 100 DSS 10-01A DSS 10-01AS C (TAB) C A C A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings Features International standard package I 35 A FRMS Very low V I T = 160C rectangular, d = 0.5 10 A F FAV C Extremely low switching losses I T = 45C t = 10 ms (50 Hz), sine 120 A FSM VJ p Low I -values RM Epoxy meets UL 94V-0 E I = 5 A L = 100 H T = 25C non repetitive 1.3 mJ AS AS VJ Applications I V =1.5 V typ. f=10 kHz repetitive 0.8 A AR A RRM Rectifiers in switch mode power (dv/dt) 5000 V/s cr supplies (SMPS) T -55...+175 C Free wheeling diode in low voltage VJ T 175 C converters VJM T -55...+150 C stg Advantages P T = 25C 90 W tot C High reliability circuit operation M mounting torque (A-Type only) 0.4...0.6 Nm d Low voltage peaks for reduced protection circuits Weight typical 2 g Low noise switching Low losses Symbol Conditions Characteristic Values typ. max. Dimensions see Outlines.pdf I V = V T = 25C 0.3 mA R R RRM VJ V = V T = 125C 2.5 mA R RRM VJ V I = 10 A T = 125C 0.66 V F F VJ I = 10 A T = 25C 0.84 V F VJ I = 20 A T = 125C 0.80 V F VJ R 1.7 K/W thJC R 0.5 K/W thCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, Conditions and dimensions. 2005 IXYS All rights reserved 1 - 2 515DSS 10-01A DSS 10-01AS 20 10 1000 mA T =175C A VJ pF 1 10 I 150C C R T I F 125C 0.1 100C 100 T = VJ 0.01 175C 75C 150C 125C 50C 25C 0.001 25C T = 25C VJ 1 0.0001 10 0.00.2 0.40.6 0.81V .0 0 2040 6080 V100 0 20406080 V100 V V V R F R Fig. 1 Maximum forward voltage Fig. 2 Typ. reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics vs: reverse voltage V versus reverse voltage V R R 40 35 A W 35 30 P (AV) A 30 d=0.5 DC 25 I I F(AV) FSM 25 20 d = 20 DC 0.5 15 0.33 15 0.25 10 0.17 10 0.08 5 5 0 0 0 40 80 120 160C 015105202530 A s T I t C F(AV) P Fig. 4 Avg: forward current I Fig. 5 Forward power loss F(AV) vs: case temperature T characteristics C 1 D=0.5 0.33 K/W 0.25 0.17 Z thJC 0.08 0.1 Single Pulse (Thermal Resistance) DSS 10-01A Note: All curves are per diode 0.01 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, Conditions and dimensions. 2005 IXYS All rights reserved 2 - 2 515