DSS17-06CR IXYS

DSS17-06CR V = 600 V RRM Schottky Diode I = 17 A FAV V = 2.54 V F High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS17-06CR Backside: isolated 3 1 Features / Advantages: Applications: Package: ISOPLUS247 Very low Vf Rectifiers in switch mode power Isolation Voltage: V~ 3600 Extremely low switching losses supplies (SMPS) Industry standard outline Low Irm values Free wheeling diode in low voltage RoHS compliant Improved thermal behaviour converters Epoxy meets UL 94V-0 High reliability circuit operation Soldering pins for PCB mounting Low voltage peaks for reduced Backside: DCB ceramic protection circuits Reduced weight Low noise switching Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200210d 2020 IXYS all rights reservedDSS17-06CR Ratings Schottky Symbol Definition Conditions min. typ. max. Unit T = 25C 600 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 600 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 6 0 0 V T = 25C 500 A R R VJ V = 6 0 0 V T = 1 2 5 C 5 mA R VJ forward voltage drop V I = 1 5 A T = 25C 3.17 V F F VJ I = 3 0 A 3.46 V F T = C 2.54 V I = 1 5 A 125 F VJ I = 3 0 A 2.90 V F average forward current T = 9 5 C T = 1 7 5 C 17 A I FAV C VJ rectangular d = 0.5 V T = 1 7 5 C 1.91 V threshold voltage F0 VJ for power loss calculation only slope resistance r 21.5 m F thermal resistance junction to case 1.4 K/W R thJC thermal resistance case to heatsink K/W R 0.3 thCH P total power dissipation T = 25C 105 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 200 A I R FSM VJ junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 20 pF C J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200210d 2020 IXYS all rights reserved