DSS 40-0008D I = 40 A Power Schottky Rectifier FAV V =8 V RRM V = 0.23 V F TO-247 AD V V Type AC RSM RRM V V 8 8 DSS 40-0008D A C C (TAB) nc A = Anode, C = Cathode , TAB = Cathode nc = not connected Symbol Conditions Maximum Ratings Features International standard package I 70 A FRMS Very low V I T = 135C rectangular, d = 0.5 40 A F FAV C Extremely low switching losses I T = 135C rectangular, d = 0.5 per device 80 A FAV C Low I -values RM I T = 45C t = 10 ms (50 Hz), sine 600 A FSM VJ p Epoxy meets UL 94V-0 E I = 40 A L = 100 H T = 25C non repetitive 80 mJ AS AS VJ Applications I V = 1.5 V typ. f = 10 kHz repetitive 4 A AR A RRM Rectifiers in switch mode power (dv/dt) 1000 V/s cr supplies (SMPS) T -55...+150 C Free wheeling diode in low voltage VJ T 150 C converters VJM T -55...+150 C stg P T = 25C 155 W tot C Advantages M mounting torque 0.8...1.2 Nm d High reliability circuit operation Low voltage peaks for reduced Weight typical 6 g protection circuits Low noise switching Low losses Symbol Conditions Characteristic Values Dimensions see Outlines.pdf typ. max. I T = 25C V = V 200 mA R VJ R RRM T = 100C V = V 1500 mA VJ R RRM V I = 40 A T = 125C 0.23 V F F VJ I = 40 A T = 25C 0.34 V F VJ I = 80 A T = 125C 0.35 V F VJ R 0.8 K/W thJC R 0.25 K/W thCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. 2004 IXYS All rights reserved 1 - 2 432DSS 40-0008D 100 10000 100 A A pF T = 150C VJ 10 I F I 125C R C T 100C 1 5000 75C T = VJ 150C 50C 0.1 125C 25C 25C T = 25C VJ 3000 10 0.01 V 0.00.2 0.40.6 V 0246 8 V10 02 468 10 V V V R F R Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics versus reverse voltage V versus reverse voltage V R R 25 80 A W 70 20 A 60 d = 0.5 DC I I P FSM F(AV) (AV) 50 15 d = 40 DC 0.5 10 30 0.33 0.25 20 0.17 5 0.08 10 0 0 0 102030405060 040 80 120 160 A s C T I t C F(AV) P Fig. 4 Average forward current I Fig. 5 Forward power loss F(AV) versus case temperature T characteristics C 1 K/W Z D = 0.5 thJC 0.33 0.25 Single Pulse 0.17 0.08 0.1 DSSK 80-0008D 0.001 0.01 0.1 1 s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode IXYS reserves the right to change limits, test conditions and dimensions. 2004 IXYS All rights reserved 2 - 2 432