DSSK60-02A IXYS

DSSK 60-02A DSSK 60-02AR I = 2x30 A Power Schottky Rectifier FAV V = 200 V RRM with common cathode V = 0.70 V F TM AC A TO-247 AD ISOPLUS 247 V V Type RSM RRM Version A Version AR V V A 200 200 DSSK 60-02A A C C 200 200 DSSK 60-02AR A A Isolated C (TAB) back surface * * Patent pending C = Cathode, A = Anode, TAB = Cathode Symbol Conditions Maximum Ratings Features International standard package I 70 A FRMS Very low V I T = 155C rectangular, d = 0.5 30 A F FAV C Extremely low switching losses I T = 155C rectangular, d = 0.5 per device 60 A FAV C Low I -values RM I T = 45C t = 10 ms (50 Hz), sine 600 A FSM VJ p Epoxy meets UL 94V-0 Version ..R isolated and E I = 4 A L = 100 H T = 25C non repetitive 0.8 mJ AS AS VJ UL registered E153432 I V =1.5 V typ. f=10 kHz repetitive 0.4 A AR A RRM Applications (dv/dt) 18000 V/s cr Rectifiers in switch mode power T -55...+175 C supplies (SMPS) VJ T 175 C Free wheeling diode in low voltage VJM T -55...+150 C converters stg P T = 25C 190 W tot C Advantages M Version A: mounting torque M3 0.8...1.2 Nm d High reliability circuit operation F Version AR: mounting force with clip 20...120 N C Low voltage peaks for reduced protection circuits V * 50/60 Hz, RMS t = 1 s 3000 V~ ISOL Low noise switching Weight typical 6 g Low losses * Version AR only Dimensions see Outlines.pdf Symbol Conditions Characteristic Values typ. max. I V = V T = 25C 2 mA R R RRM VJ V = V T = 125C 20 mA R RRM VJ V I = 30 A T = 125C 0.70 V F F VJ I = 30 A T = 25C 0.85 V F VJ I = 60 A T = 125C 0.84 V F VJ R 0.8 K/W thJC R 0.25 K/W thCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions. 2005 IXYS All rights reserved 1 - 2 0548DSSK 60-02A DSSK 60-02AR 100 100 10000 mA A pF T =175C VJ 10 I C R T I F 150C 1 125C 10 1000 T = VJ 100C 0.1 175C 125C 25C 75C 0.01 50C T = 25C 25C VJ 1 100 0.001 0.00.2 0.40.6 0.81.0 V1.2 V 0 50 100 V 150 0 50 100 150 V V V R R F Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics versus reverse voltage V versus reverse voltage V R R 80 60 W A 50 P (AV) 60 I 40 F(AV) d = DC d=0.5 DC 40 30 0.5 0.33 0.25 20 0.17 20 0.08 10 0 0 0 40 80 120 160C 0 102043006500 A T I C F(AV) Fig. 4 Average forward current I Fig. 5 Forward power loss characteristics F(AV) versus case temperature T C 1 D=0.5 0.33 K/W 0.25 Z 0.17 thJC 0.08 Single Pulse 0.1 DSSK 60-02A 0.01 0.001 0.01 0.1 1 s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, Conditions and dimensions. 2005 IXYS All rights reserved 2 - 2 0548