DSSK80-003B IXYS

DSSK 80-0025B DSSK 80-003B I = 2x40 A Power Schottky Rectifier FAV V = 25 / 30 V RRM with common cathode V = 0.39 V F TO-247 AD V V Type RSM RRM V V AC A A 25 25 DSSK 80-0025B C C (TAB) 30 30 DSSK 80-003B A A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings Features International standard package I 70 A FRMS Very low V F I T = 130C rectangular, d = 0.5 40 A FAV C Extremely low switching losses I T = 130C rectangular, d = 0.5 per device 80 A FAV C Low I -values RM Epoxy meets UL 94V-0 I T = 45C t = 10 ms (50 Hz), sine 600 A FSM VJ p E I = 6 A L = 180 H T = 25C non repetitive 10 mJ AS AS VJ Applications I V =1.5 V typ. f=10 kHz repetitive 6 A AR A RRM Rectifiers in switch mode power supplies (SMPS) (dv/dt) 5000 V/s cr Free wheeling diode in low voltage T -55...+150 C VJ converters T 150 C VJM T -55...+150 C stg Advantages P T = 25C 155 W tot C High reliability circuit operation M mounting torque 0.8...1.2 Nm Low voltage peaks for reduced d protection circuits Weight typical 6 g Low noise switching Low losses Dimensions see pages D2 - 87-88 Symbol Conditions Characteristic Values typ. max. I T = 25CV = V 40 mA R VJ R RRM T = 100CV = V 250 mA VJ R RRM V I = 40 A T = 125C 0.39 V F F VJ I = 40 A T = 25C 0.48 V F VJ I = 80 A T = 125C 0.56 V F VJ R 0.8 K/W thJC R 0.25 K/W thCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. 2002 IXYS All rights reserved 1 - 2 232DSSK 80-0025B DSSK 80-003B 100 10000 10000 mA A pF T = 150C VJ 1000 I R C T I F 125C 100 10 100C 10 T = 75C VJ 150C 125C 50C 1 25C T = 25C VJ 25C 1 0.1 1000 0.0 0.2 0.4 V0.6 0 5 10 15 20 25 0 5 10 15 20 V 25 V V V V R R F Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics versus reverse voltage V versus reverse voltage V R R 40 80 A W 35 70 P (AV) A 30 60 d = 0.5 DC I I F(AV) FSM 25 50 d = 20 40 DC 0.5 15 30 0.33 0.25 10 20 0.17 0.08 5 10 0 0 0 1020 30405060 A s 0 40 80 120 160 C T I t C F(AV) P Fig. 4 Average forward current I Fig. 5 Forward power loss F(AV) versus case temperature T characteristics C 1 K/W D=0.5 Z thJC 0.33 0.25 0.17 Single Pulse 0.08 0.1 DSSK 80-0025B 0.001 0.01 0.1 1 s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode 2002 IXYS All rights reserved 2 - 2