DSSK80-0045B IXYS

DSSK 80-0045B I = 2x40 A Power Schottky Rectifier FAV V = 45 V RRM with common cathode V = 0.45 V F TO-247 AD V V Type RSM RRM D2 V V AC A A 45 45 DSSK 80-0045B C C (TAB) A A = Anode, C = Cathode , TAB = Cathode Features Symbol Conditions Maximum Ratings International standard package I 70 A FRMS Very low V F I T = 125C rectangular, d = 0.5 40 A FAV C Extremely low switching losses I T = 125C rectangular, d = 0.5 per device 80 A FAV C Low I -values RM Epoxy meets UL 94V-0 I T = 45C t = 10 ms (50 Hz), sine 600 A FSM VJ p E I = 20 A L = 180 H T = 25C non repetitive 57 mJ AS AS VJ Applications I V =1.5 V typ. f=10 kHz repetitive 2 A AR A RRM Rectifiers in switch mode power supplies (SMPS) (dv/dt) 1000 V/ s cr Free wheeling diode in low voltage T -55...+150 C converters VJ T 150 C VJM T -55...+150 C stg Advantages P T = 25C 155 W tot C High reliability circuit operation Low voltage peaks for reduced M mounting torque 0.8...1.2 Nm d protection circuits Weight typical 6 g Low noise switching Low losses Symbol Conditions Characteristic Values typ. max. Dimensions see pages D2 - 87-88 I T = 25CV = V 30 mA R VJ R RRM T = 100CV = V 250 mA VJ R RRM V I = 40 A T = 125C 0.45 V F F VJ I = 40 A T =25C 0.51 V F VJ I = 80 A T = 125C 0.69 V F VJ R 0.8 K/W thJC R 0.25 K/W thCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions. 2002 IXYS All rights reserved 1 - 2 232DSSK 80-0045B 100 10000 10000 mA A pF T =150 C VJ 1000 I C R T I F 125 C 100 100 C 10 1000 10 T = 75 C VJ 150 C 125 C 50 C 25 C 1 25 C T = 25 C VJ 1 100 0.1 0.0 0.2 0.4 0.6 V 0 10 203040 50 0 10203040 V V V V V R R F Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics versus reverse voltage V versus reverse voltage V R R 45 10000 80 W A 40 70 35 A P 60 (AV) I I F(AV) FSM 30 50 d=0.5 DC 25 d = 1000 40 DC 20 0.5 30 0.33 15 0.25 20 0.17 10 0.08 10 5 0 100 0 A 0 102043006500 10 100 1000 s 10000 040 80 120 C160 T I t C F(AV) P Fig. 4 Average forward current I Fig. 5 Forward power loss F(AV) versus case temperature T characteristics C 1 K/W D=0.5 Z thJC 0.33 0.25 0.17 Single Pulse 0.08 0.1 DSSK 80-0045B 0.05 0.001 0.01 0.1 1 10 s t Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode 2002 IXYS All rights reserved 2 - 2 232