DSSK80-006B IXYS

DSSK 80-006B I = 2x40 A Power Schottky Rectifier FAV V =60V RRM with common cathode V = 0.51 V F AC A TO-247 AD V V Type RSM RRM V V A 60 60 DSSK 80-006B C C (TAB) A A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings Features International standard package I 70 A FRMS Very low V I T = 120C rectangular, d = 0.5 40 A F FAV C Extremely low switching losses I T = 120C rectangular, d = 0.5 per device 80 A FAV C Low I -values RM I T = 45C t = 10 ms (50 Hz), sine 600 A FSM VJ p Epoxy meets UL 94V-0 E I = 20 A L = 100 H T = 25C non repetitive 20 mJ AS AS VJ Applications I V = 1.5V typ. f = 10 kHz repetitive 2 A AR A RRM Rectifiers in switch mode power supplies (SMPS) (dv/dt) 1000 V/s cr Free wheeling diode in low voltage T -55...+150 C converters VJ T 150 C VJM T -55...+150 C Advantages stg High reliability circuit operation P T = 25C 155 W tot C Low voltage peaks for reduced M mounting torque 0.8...1.2 Nm d protection circuits Low noise switching Weight typical 6 g Low losses Dimensions see Outlines.pdf Symbol Conditions Characteristic Values typ. max. I V = V T = 25C 20 mA R R RRM VJ T = 100C 200 mA VJ V I = 40 A T = 125C 0.51 V F F VJ I = 40 A T = 25C 0.55 V F VJ I = 80 A T = 125C 0.74 V F VJ R 0.8 K/W thJC R 0.25 K/W thCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0% Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, Conditions and dimensions. 2006 IXYS All rights reserved 1 - 2 0622DSSK 80-006B 100 10000 10000 mA A pF T =150C 1000 VJ I C R T I F 125C 100 100C 10 1000 10 75C T = VJ 1 150C 50C 125C 25C 0.1 25C T = 25C VJ 1 0.01 100 V 0.0 0.2 0.4 0.6 0.8 0 1020 3040 506V 0 0 1020 3040 506V0 V V V R F R Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics versus reverse voltage V versus reverse voltage V R R 50 80 A W 70 40 A 60 P I (AV) I F(AV) FSM 50 30 d = 0.5 DC d = 40 DC 0.5 20 30 0.33 0.25 20 0.17 10 0.08 10 0 0 02100 3040 5060 A70 040 80 120 160 s C T I t C F(AV) P Fig. 4 Average forward current I Fig. 5 Forward power loss characteristics F(AV) versus case temperature T C 1 K/W Z thJC D = 0.5 0.33 0.25 0.17 0.08 Single Pulse DSSK 80-006B Note: All curves are per diode 0.1 0.001 0.01 0.1 1 s t Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, Conditions and dimensions. 2006 IXYS All rights reserved 2 - 2 0622