FBE22-06N1 IXYS

FBE22-06N1 V = 600 V RRM HiPerFRED I = 22 A DAV t = 30 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery 1~ Rectifier Bridge Part number FBE22-06N1 Backside: isolated 2 5 4 1 Features / Advantages: Applications: Package: i4-Pac Planar passivated chips Rectifiers in switch mode power Isolation Voltage: V~ 3000 Very low leakage current supplies (SMPS) Industry convenient outline Very short recovery time RoHS compliant Improved thermal behaviour Epoxy meets UL 94V-0 Very low Irm-values Soldering pins for PCB mounting Very soft recovery behaviour Backside: DCB ceramic Avalanche voltage rated for reliable operation Reduced weight Soft reverse recovery for low EMI/RFI Advanced power cycling Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191211b 2019 IXYS all rights reservedFBE22-06N1 Ratings Fast Diode Symbol Definition Conditions min. typ. max. Unit T = 25C 600 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 600 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 6 0 0 V T = 25C 60 A R R VJ V = 6 0 0 V T = 1 5 0 C 0.25 mA R VJ forward voltage drop V I = 1 1 A T = 25C 2.13 V F F VJ I = 2 2 A 2.35 V F T = C 1.44 V I = 1 1 A 150 F VJ I = 2 2 A 1.71 V F bridge output current T = 1 1 5 C T = 1 7 5 C 22 A I DAV C VJ rectangular d = 0.5 V T = 1 7 5 C 1.04 V threshold voltage F0 VJ for power loss calculation only slope resistance r 24 m F thermal resistance junction to case 3 K/W R thJC thermal resistance case to heatsink K/W R 0.2 thCH P total power dissipation T = 25C 50 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 50 A I R FSM VJ junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 6 pF C J R VJ I max. reverse recovery current T = 25 C 3.5 A RM VJ I = 10 A V = 300 V T = 100C 6 A F R VJ reverse recovery time -di /dt = 200A/s T = 25 C 30 ns t rr F VJ T = 100C 90 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191211b 2019 IXYS all rights reserved