GBO25-12NO1 3~ 1~ Standard Rectifier Rectifier V = 1200 V RRM I 25 A = DAV A I = 370 FSM 1~ Rectifier Bridge Part number GBO25-12NO1 Backside: isolated + D1 D3 ~ ~ D2 D4 - Features / Advantages: Applications: Package: GBFP Low forward voltage drop Supplies for DC power equipment Isolation Voltage: V~ 2500 Planar passivated chips Input rectifiers for PWM inverter Industry standard outline Easy to mount with one screw Battery DC power supplies RoHS compliant Space and weight savings Field supply for DC motors Epoxy meets UL 94V-0 Soldering pins for PCB mounting Base plate: Plastic overmolded tab Reduced weight Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191211d 2019 IXYS all rights reservedGBO25-12NO1 Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1300 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1200 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 2 0 0 V T = 25C 40 A R VJ R V = 1 2 0 0 V T = 1 5 0 C 1.5 mA R VJ forward voltage drop V I = 1 0 A T = 25C 1.06 V F F VJ I = 2 0 A 1.17 V F T = C 0.92 V I = 1 0 A 150 F VJ I = 2 0 A 1.09 V F bridge output current T = 1 0 5 C T = 1 7 5 C 25 A I DAV C VJ rectangular d = 0.5 V T = 1 7 5 C 0.74 V threshold voltage F0 VJ for power loss calculation only slope resistance r 16.3 m F thermal resistance junction to case 4.3 K/W R thJC thermal resistance case to heatsink K/W R 0.5 thCH P total power dissipation T = 25C 35 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 370 A I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 400 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 315 VJ t = 8,3 ms (60 Hz), sine V = 0 V 340 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 685 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 665 As R t = 10 ms (50 Hz), sine T = 1 5 0 C 495 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 480 As R V = 4 0 0 V f = 1 MHz T = 25C 10 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191211d 2019 IXYS all rights reserved