IX6611T IXYS

IX6611 IGBT Gate Driver Features Description Input Compatible with Pulse Transformer The IX6611 is a secondary side, intelligent, high 10A Peak Source and Sink Current Gate Drive speed gate driver designed to drive IXYS IGBTs as Separate Source and Sink Outputs well as power MOSFET devices. The IX6611 gate Negative Gate Drive Capability driver contains the necessary circuit blocks for pulse Over Current Protection transformer isolated applications. High frequency, with Adjustable Blanking Time narrow pulses are used for bidirectional data transfer Advanced Active Clamping Protection across the isolation boundary to avoid duty cycle Under Voltage Lockout Protection restrictions and to prevent transformer saturation. The Over Voltage Lockout Protection IX6611 includes the necessary monitor/protection Two One-Amp Pulse Transformer drivers functions such as Supply Under Voltage Lockout, for Fault Communication Supply Over Voltage Lockout, Thermal Shut down, external IGBT Over Current and Over Voltage protection. Applications AC and DC Motor Drives The IX6611 is designed to operate over a temperature UPS Systems range of -40C to +125C. The IX6611 is available in a High Voltage DC/DC Converters 16-lead SOIC with an exposed thermal pad. Ordering Information Part Description IX6611T 16-Pin SOIC in Tubes (50/Tube) IX6611TR 16-Pin SOIC Tape & Reel (1000/Reel) IX6611 Tested Die Figure 1. IX6611 Block Diagram V CC V CC 3 V DD V REF0 DD REF1 REF1 OVLO 14 ACL REF2 COMP ACL IBLANK COMP 3.1V V VREF LEVEL DD EN REF3 300mV SHIFT REF4 OC UVLO RICM COMP 300mV COMP 13 ICM EN REF2 ON OFF COM 4 V V CC CC COM LEB V EE 6 IBLANK COMP V EE V V EE V V DD DD CC REF0 FLT1 5 C 12 BLANK OUTPUT FAULT 5V REGULATOR V FAULT PULSE EE CONTROL REFERENCED GENERATOR V LOGIC DD TO V FLT2 7 EE V EE V 8 DD V V DD V V V CC EE EE V EE EE V THSD EE PV CC NC 11 V CC 2 PV CC V EE V V DD DD V V IN CC CC RCVP 9 V 1 OUTP EE PULSE PGATE V ON EE RECOVERY GATE NGATE LEVEL OFF V LOGIC EE CONTROL SHIFT V V LOGIC CC 16 OUTN DD RCVN 10 INB V V V V 15 PV EE EE EE EE EE V EE V EE PV EE DS-IX6611-R00A PRELIMINARY 1IX6611 1. Specifications 3 1.1 Package Pinout Pin Description . 3 1.2 Pin Configuration and Definitions 3 1.3 Absolute Maximum Ratings 25C . 4 1.4 ESD Warning . 4 1.5 Electrical Characteristics 5 1.5.1 Thermal Characteristics . 5 1.5.2 Power Supply Terminals . 5 Regulator (Logic Supply) . 5 1.5.3 V DD 1.5.4 Input Terminals 5 1.5.5 Input Interface/Pulse Recovery 6 1.5.6 Thermal Shutdown Circuit 6 1.5.7 UVLO Circuit 6 1.5.8 OVLO Circuit 6 1.5.9 Leading Edge Blanking Circuit (LEB) . 7 1.5.10 Over Current Comparator . 7 1.5.11 Active Clamp Comparator . 7 1.5.12 Fault Outputs and Control Logic 8 1.5.13 IGBT Driver Output 8 2. Timing Diagrams 9 3. Theory of Operation 11 3.1 Detailed Circuit Description . 11 3.1.1 Input Interface 11 3.1.2 Pulse Recovery Logic 11 3.1.3 Gate Control Logic 11 3.1.4 IGBT Drive Outputs 12 3.1.5 Over Current Comparator . 12 3.1.6 Leading Edge Blanking Circuit . 12 3.1.7 Active Clamp Comparator . 12 3.1.8 Thermal Shutdown (THSD) 12 3.1.9 Output Fault Pulse Generator 12 3.1.10 5V Regulator 13 3.1.11 Under Voltage and Over Voltage Lockout . 13 3.1.12 Fault Control Logic . 13 4. Manufacturing Information . 14 4.1 Moisture Sensitivity . 14 4.2 ESD Sensitivity 14 4.3 Soldering Profile 14 4.4 Board Wash . 14 4.5 Package Mechanical Dimensions 15 4.5.1 IX6611T 16-Pin SOIC 15 4.5.2 IX6611TTR Tape & Reel 15 2 PRELIMINARY R00A