IXBD4410 IXBD4411 TM ISOSMART Half Bridge Driver Chipset Type Description Package Temperature Range IXBD4410PI Full-Feature Low-Side Driver 16-Pin P-DIP -40 to +85C IXBD4411PI Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85C IXBD4410SI Full-Feature Low-Side Driver 16-Pin SO -40 to +85C IXBD4411SI Full-Feature High-Side Driver 16-Pin SO -40 to +85C The IXBD4410/IXBD4411 ISOSMART reference IXBD4411. They incorporate Features chipset is designed to control the gates undervoltage V or V lockout and DD EE z 1200 V or greater low-to-high side of two Power MOSFETs or Power overcurrent or desaturation shutdown isolation. IGBTs that are connected in a half- to protect the IGBT or Power MOSFET z Drives Power Systems Operating on bridge (phase-leg) configuration for devices from damage. up to 575 V AC mains driving multiple-phase motors, or used z dv/dt immunity of greater than in applications that require half-bridge The chipset provides the necessary 50V/ns power circuits. The IXBD4410/ gate drive signals to fully control the z Proprietary low-to-high side level IXBD4411 is a full-feature chipset grounded-source low-side power translation and communication consisting of two 16-Pin DIP or SO device as well as the floating-source z On-chip negative gate-drive supply devices interfaced and isolated by two high-side power device. Additionally, to ensure Power MOSFET or IGBT small-signal ferrite pulse transformers. the IXBD4410/4411 chipset provides a turn-off and to prevent gate noise The small-signal transformers provide negative-going, off-state gate drive interference greater than 1200 V isolation. signal for improved turn-off of IGBTs or z 5 V logic compatible HCMOS inputs Power MOSFETs and a system logic- with hysteresis Even with commutating noise ambients compatible status fault output FLT to z Available in either the 16-Pin DIP or greater than 50 V/ns and up to 1200 V indicate overcurrent or desaturation, the 16-Pin wide-body, small-outline potentials, this chipset establishes and undervoltage V or V . During a DD EE plastic package error-free two-way communications status fault, both chipset keep their z 20 ns switching time with 1000 pF between the system ground-reference respective gate drive outputs off at load 100 ns switching time with IXBD4410 and the inverter output- V . EE 10,000 pF load z 100 ns propagation delay time z 2 A peak output drive capability z Self shut-down of output in response to over-current or short-circuit z Under-voltage and over-voltage V DD lockout protection z Protection from cross conduction of the half bridge z Logic compatible fault indication from both low and high-side driver Applications 540 V- z 1- or 3-Phase Motor Controls z Switch Mode Power Supplies (SMPS) z Uninterruptible Power Supplies (UPS) z Induction Heating and Welding Systems z Switching Amplifiers z General Power Conversion Circuits IXYS reserves the right to change limits, test conditions and dimensions. 2004 IXYS All rights reserved 1IXBD4410 IXBD4411 Symbol Definition Maximum Ratings Dimensions in inch (1 = 25.4 mm) 16-Pin SOIC V /V Supply Voltage -0.5 ... 24 V DD EE V Input Voltage (INH, INL) -0.5...V +0.5 V in DD I Input Current (INL, INH, IM) 10 A in I (rev) Peak Reverse Output Current (OUT) 2 A o P Maximum Power Dissipation (T = 25 C) 600 mW D A P T = 25 C (16-Pin SOIC) 10 W D C T Operating Ambient Temperature -40 ... 85 C A T Maximum Junction Temperature 150 C JM T Storage Temperature Range -55 ... 150 C stg T Lead Soldering Temperature for 10 s 300 C L R 1.67 K/W thJA Die substrate R (16-Pin SOIC) 10 K/W connected to tab thJC Recommended Operating Conditions V /V Supply Voltage 10 ... 20 V DD EE V /LG 10 ... 16.5 V DD L /L Maximum Common Mode dv/dt 50 V/ns Gh Gl Symbol Definition/Condition Characteristic Values (T = 25C, V = 15 V, unless otherwise specified) A DD min. typ. max. INL, INH Inputs (referred to LG) V Positive-Going Threshold 3.65 V t+ V Negative-Going Threshold 1 V t- V Input Hysteresis 1 V ih 16-Pin Plastic DIP I Input Leakage Current/V =V or LG -1 1 A in in DD C Input Capacitance 10 pF in Open Drain Fault Output (referred to LG) V HI Output/R = 10 k to V V -0.05 V oh pu DD DD V LO Output/I = 4 mA 0.3 0.5 V ol o OUT Output (referred to LG) V HI Output/I = -5 mA V -0.05 V oh o DD V LO Output/I = 5 mA V +0.05 V ol o EE R Output HI Res./I = -0.1 A 3 5 o o R Output LO Res./I = 0.1 A 3 4 o o I Peak Output Current/C = 10 nF 1.5 2 A pk L IM Input (referred to KG) End view V Positive-Going Threshold 0.24 0.3 0.45 V t+ C Input Capacitance 10 pF in R Shorting Device Output Resistance 50 75 100 s VEE Supply (referred to LG) V Output Voltage/I = 1 mA, C = 1 F -5 -6.5 -7.5 V EE o o I Output Current/V = 0.70 V -20 -25 mA out out EE f Inverting Frequency 600 kHz inv V Undervoltage Fault Indication -3 -4.8 V EEF 2004 IXYS All rights reserved