IXBOD1-10 IXYS

IXBOD1 1 V = 600-1000 V BO Breakover Diode Gen I = 0.9 A AVM (BOD1) V BO Standard Types V 600 50 IXBOD1-06 700 50 IXBOD1-07 800 50 IXBOD1-08 900 50 IXBOD1-09 1000 50 IXBOD1-10 Backside: isolated A K Features / Advantages: Applications: Package: FP-Case Fast turn on High voltage circuit protection Industry standard outline Low temperature dependance Transient voltage protection RoHS compliant Low leakage current Trigger device Epoxy meets UL 94V-0 Power pulse generators Soldering pins for PCB mounting Lightning and arcing protection Base plate: Plastic overmolded tab Energy discharge circuits Reduced weight Battery overvoltage protection Solar array protection Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise speci ed 20210720b 2020 IXYS All rights reserved 1 - 5IXBOD1 BOD1 Ratings Symbol De nitions Conditions min. typ. max. drain current I V = 0.8V T = 125C 20 A D D BO VJ breakover voltage V V (T ) = V 1 + K (T - 25C) V BO BO VJ BO, 25C T VJ RMS current I f = 50 Hz T = 50C 1.4 A RMS amb pins soldered to printed circuit (conductor 0.035x2mm) I maximum average forward current 0.9 A FAVM I maximum pulsed source current t = 0.1 ms non repetitive T = 50C 200 A SM p amb 2 2 2 I t value for fusing I t t = 0.1 ms T = 50C 2 A s p amb -3 -1 K 210 K temperature coef cient of V T BO coef cient for energy per pulse EP (material constant) K 700 K/Ws P thermal resistance junction to ambient R natural convection 60 K/W thJA with air speed 2 m/s 45 K/W I breakover current T = 25C 15 mA BO VJ I holding current T = 25C 30 mA H VJ holding voltage V T = 25C 4 8 V H VJ (dv/dt) critical rate of rise of voltage V = 0.67(V +100 V) T = 50C 1000 V/s cr D BO VJ critical rate of rise of curent (di/dt) V = V I = 80 A f = 50 Hz T = 125C 200 A/s cr D BO T VJ t turn-off time V = 0.67V V = 0 V I = 80 A T = 125C 150 s q D BO R T VJ dv/dt = 200 V/s di/dt = -10 A/s (lin.) forward voltage drop V I = 5 A T = 125C 1.7 V T T VJ V threshold voltage 1.1 V T0 for power-loss calculation only T = 125C VJ slope resistance r 0.12 T IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise speci ed 20210720b 2020 IXYS All rights reserved 2 - 5