Switchable Current IXCP 10M45S V = 450 V AK Regulators IXCY 10M45S I = 2 - 100 mA A(P) R = 9 - 900 k DYN Symbol Test Condition Maximum Ratings TO-220 AB (IXCP) V T = 25C to 150C 10M35S 450 V AKR J A V T = 25C to 150C 10M35S 450 V AGR J G V 20 V GK A K TO-252 AA I T = 25C -0.3 A (IXCY) D C A P T = 25C40W D C G T -55 ... +150 C J T -55 ... +150 C K stg T Temperature for Soldering (max. 10 s) 260 C L Pin connections M Mounting torque with screw M3 (TO-220) 0.45/4 Nm/lb.in. D 1 = G, Control terminal with screw M3.5 (TO-220) 0.55/5 Nm/lb.in. 2 and 4 = A (+) Positive terminal 3 = K (-), Negative terminal Features Symbol Test Condition Characteristic Values z Minimum of 350/450 V (T = 25C unless otherwise specified) breakdown J min. typ. max. z Resistor programmable current source V R = 300 , (Fig. 4) 10M35S 450 V z 40 W continuous dissipation AKR K z International standard packages I V = 10 V R = 300 (Fig. 5) 7 10 15 mA JEDEC TO-220 and TO-252 A(P) D K z On/Off switchable current source V I = 100 A V = 400 V 10M45S -5 V G(off) D D Fig. 4 Applications I V = 400 V V = -10 V 10M45S 25 A AV D GK z Start-up circuits for SMPS Fig. 4 z Highly stable voltage sources z Surge limiters and voltage protection V / I Dynamic resistance V = 10 V 160 k AK A(p D z Instantaneously reacting resetable R = 300 (Fig. 4) K fuses z Soft start-up circuits R Thermal Resistance junction-to-case 3.1 K/W thJC R Thermal Resistance junction-to-ambient TO-220 80 K/W thJA TO-252 100 K/W 2004 IXYS All rights reserved DS98704(07/04) IXCP 10M45S IXCY 10M45S TO-220 AB Outline I A (+) D(p) G V D K (-) R K Fig. 1 Resistor R in series with negative pin K to achieve different current levels 100 10 1 TO-252 AA Outline 10 100 1000 10000 Series Resistor R - Ohms K Fig. 2. Plateau current versus external resistance I A (+) D(p) V G D V GK K (-) Fig. 3. Current regulator controlled by V G Dim. Millimeter Inches 1000 Min. Max. Min. Max. A 2.19 2.38 0.086 0.094 A1 0.89 1.14 0.035 0.045 A2 0 0.13 0 0.005 100 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 10 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.32 5.21 0.170 0.205 1 E 6.35 6.73 0.250 0.265 E1 4.32 5.21 0.170 0.205 e 2.28 BSC 0.090 BSC e1 4.57 BSC 0.180 BSC 0.1 H 9.40 10.42 0.370 0.410 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 L 0.51 1.02 0.020 0.040 V - Volts GS L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 Fig. 4. Plateau current versus applied input voltage L3 2.54 2.92 0.100 0.115 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 I - milliamperes D(P) I - milliamperes D(P)