The IXDN602SIA is a Dual N-Channel MOSFET from IXYS Corporation. The device has a pulse source and low on-resistance to reduce conduction losses in high-frequency applications. The device features a surface-mount 8-pin SOIC (Small Outline Integrated Circuit) package with eight terminals for VDS, GND, VGS, and SOURCE. It also features dual Trench MOSFET technology for reduced switching losses as well as a low threshold for improved circuit efficiency. The IXDN602SIA is ideal for a wide range of applications, including solenoids, relays, pulse generators, level shifters, and H-Bridges.