Preliminary Technical Information V = 1500V 1500V MOS Gated IXHH40N150HV DM Thyristor A G K TO-247HV Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1500 V DM J G V Continuous 30 V GK K V Transient 40 V GK Tab A I T = 25C, 1s 7.6 kA TSM C T = 25C, 10s 3.5 kA C P T = 25C 695 W D C T -55 ... +150 C J G = Gate K = Cathode T 150 C A = Anode Tab = Anode JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062 in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13/10 Nm/lb.in d Features Weight 6 g Very High Voltage Package Very High Current Capability Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. High Power Density J Low Gate Drive Requirement V I = 250 A, V = 0V 1500 V BR A GK V I = 250A, V = V 2.5 5.0 V GK(th) A AK GK Applications V I = 1000A, V = 15V 5.95 7.5 V T T GK r I > I , V = 15V 1.20 m Capacitive Discharge Circuits T T L GK Ignition Circuits V V = 15V 6.45 V BO GK Solid State Surge Protection I V = 1500V, V = 0V 15 A D AK GK T = 125C 1 mA J I 250 A L I 200 A H I V = 0V, V = 30V 200 nA GKS AK GK 2014 IXYS CORPORATION, All Rights Reserved DS100611A(6/14)IXHH40N150HV Symbol Test Conditions Characteristic Values TO-247HV Outline E1 E A (T = 25C Unless Otherwise Specified) Min. Typ. Max. R J 0P A2 0P1 Q S C 2825 pF iks D1 C V = 25V, V = 0V, f = 1MHz 164 pF D AK GK 4 oks C 50 pF rks D2 1 2 3 L1 A3 Q 99 nC D3 E2 g(on) 2X E3 A1 4X L Q I = 40A, V = 15V, V = 600V 22 nC gk C GK AK Q 36 nC ga e b b1 c e1 3X 3X t 100 ns Capacitive Discharge, T = 25C ri PINS: J 1 - Gate 2 - Cathode I = 2000A, V = 15V, R = 1 A GK G 3, 4 - Anode t 50 ns d V = 1000V, L < 20nH, Notes 2 & 3 AK Capacitive Discharge, T = 125C t 100 ns J ri I = 2000A, V = 15V, R = 1 A GK G t 50 ns V = 1000V, L < 20nH, Notes 2 & 3 d AK R 0.18 C/W thJC R 0.21 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. It is recommended to use a gate driver capable of supplying more than 4Amps and >15V gate voltage. 3. Refer to fig. 8 & 9. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537